SPICE MODEL of TPC8012-H (Professional+BDP Model) in SPICE PARK
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The document provides a detailed device modeling report for the power MOSFET TPC8012-H manufactured by Toshiba, including circuit configurations and simulation results. Key characteristics such as transconductance, gate charge, capacitance, and switching times are measured and compared with simulation data, highlighting errors in performance. Additionally, the document discusses the ESD protection diode associated with the MOSFET, providing relevant zener voltage characteristics.
SPICE MODEL of TPC8012-H (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPC8012-H MANUFACTURER: TOSHIBA Body Diode (Professional)/ / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. Circuit Configuration U1 TPC8012-H Equivalent Circuit D S1 - - + + R2 S R1 10MEG DGD 10M CGD S2 + + - - Q1 S G S All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Transconductance Characteristic Circuit Simulation Result Comparison table gfs Id(A) Error (%) Measurement Simulation 0.1 0.54100 0.526 -2.773 0.2 0.74100 0.743 0.270 0.5 1.1630 1.168 0.430 1 1.6670 1.645 -1.320 2 2.3530 2.309 -1.870 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Vgs-Id Characteristic Circuit Simulation result 2.0A 1.0A 0A 0V 2V 4V 6V 8V 10V I(V3) V_V1 Evaluation circuit V3 0Vdc U1 TPC8012-H V2 V1 10 8 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.1 5.15 5.1615 0.223 0.2 5.3 5.3228 0.430 0.5 5.65 5.6438 -0.110 1 6.05 6.0074 -0.704 2 6.55 6.5248 -0.385 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Rds(on) Characteristic Circuit Simulation result 800mA 600mA 400mA 200mA 0A 0V 100mV 200mV 300mV 400mV 500mV I(V2) V_V3 Evaluation circuit V2 0Vdc U1 TPC8012-H V3 0Vdc V1 10 0 Simulation Result ID=0.9A, VGS=10V Measurement Simulation Error (%) R DS (on) 0.28 0.28 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Gate Charge Characteristic Circuit Simulation result 16V 12V 8V 4V 0V 0s 4ns 8ns 12ns 16ns 20ns V(W1:3) Time*1m Evaluation circuit RON = 1.0 ROFF = 1e6 ION = 0 IOFF = 100u W1 + I2 - W D1 1.8 I1 = 0 Dbreak I1 I2 = 1m U1 TD = 0 TPC8012-H V1 TR = 10n TF = 10n PW = 200u PER = 500u 160 0 Simulation Result VDD=160V,ID=1.8A Measurement Simulation Error (%) Qgs (nC) 4.2 4.1915 -0.202 Qgd (nC) 4.6 4.5638 -0.787 Qg (nC) 11.5 11.544 0.383 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 750 746 -0.533 0.2 680 679.5 -0.074 0.5 550 554 0.727 1 440 445 1.136 2 340 339 -0.294 5 230 226 -1.739 10 165 163 -1.212 20 115 116 0.870 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Switching Time Characteristic Circuit Simulation result 20V 10V 0V 1.75us 2.00us 2.25us 2.50us V(U1:4) V(U1:5)/10 Time Evaluation circuit L1 R2 50nH 111 L2 V1 30nH 100 V1 = 0 V2 R4 V2 = 10 U1 TD = 2u 50 TPC8012-H TR = 6n TF = 7n PW = 10u PER = 30u 0 Simulation Result ID=0.9 A, VDD=100V Measurement Simulation Error(%) VGS=0/10V Ton (ns) 28 28.073 0.261 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. Output Characteristic Circuit Simulation result 5.0A 7.6 7.3 4.0A 7 3.0A 6.6 2.0A 6 1.0A VGS=5 V 0A 0V 4V 8V 12V 16V 20V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc Vv ariable Vstep U1 TPC8012-H 20 5 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. Forward Current Characteristic Circuit Simulation Result 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 V1 TPC8012-H 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Comparison Graph Circuit Simulation Result Simulation Result VDS(V) IDR(A) %Error Measurement Simulation 0.1 0.635 0.636 0.157 0.2 0.67 0.668 -0.299 0.5 0.716 0.714 -0.279 1 0.75 0.752 0.267 2 0.8 0.799 -0.125 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 200mA 0A -200mA -400mA 14.4us 14.8us 15.2us 15.6us 16.0us 16.4us I(RL) Time Evaluation Circuit RL 50 V1 = -9.4 V1 V2 = 10.67 U1 TD = 0 TR = 10n DTPC8012-H TF = 10n PW = 15u PER = 100u 0 Simulation Result Measurement Simulation Error (%) Trj(ns) 228 228.010 0.004 Trb(ns) 192 193.265 0.659 Trr(ns) 420 421.275 0.304 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. Reverse Recovery Characteristic Reference Trj=228(ns) Trb=192(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 16. ESD PROTECTION DIODE Zener Voltage Characteristic Circuit Simulation Result 10mA 5mA 0A 0V 10V 20V 30V 40V 50V 60V 70V 80V 90V 100V I(R1) V_V1 Evaluation Circuit R1 R2 U1 1G 0.01m TPC8012-H V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007