SPICE MODEL of TPCF8102 (Standard+BDS Model) in SPICE PARK
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The document provides a detailed device modeling report for the Toshiba power MOSFET TPCF8102, including model parameters, circuit configurations, and simulation results for various characteristics such as transconductance, drain-source resistance, and gate charge. It contains comparative data between measurement and simulation outputs, highlighting error percentages for key performance metrics. The report also features characteristics of the body diode and ESD protection diode, alongside simulation results for their respective behaviors under different conditions.
SPICE MODEL of TPCF8102 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameter) PART NUMBER: TPCF8102 MANUFACTURER: TOSHIBA Body Diode (Model Parameter) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 2. Circuit Configuration TP CF8 10 2 MOSFET MODEL Pspice model Model description Parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 3. Transconductance Characteristic Circuit Simulation Result Comparison table gfs Id(A) Error(%) Measurement Simulation -0.500 6.097 6.250 2.509 -1.000 8.333 8.621 3.452 -2.000 11.765 11.765 -0.002 -5.000 17.240 17.422 1.053 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 4. Vgs-Id Characteristic Circuit Simulation result -10A -8A -6A -4A -2A 0A 0V -0.5V -1.0V -1.5V -2.0V -2.5V I(V3) V_V1 Evaluation circuit TPCF8102 V3 0Vdc V1 -4.5Vdc V2 -10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 5. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation -0.200 -1.225 -1.242 1.412 -0.500 -1.290 -1.302 0.922 -1.000 -1.370 -1.371 0.044 -2.000 -1.460 -1.471 0.740 -5.000 -1.655 -1.680 1.498 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 6. Rds(on) Characteristic Circuit Simulation result -3.0A -2.0A -1.0A -0.1A 0V -20mV -50mV -80mV -110mV -140mV -170mV I(V3) V_V2 Evaluation circuit TPCF8102 V3 0Vdc V1 -4.5Vdc V2 -10Vdc 0 Simulation Result ID=-3.0A, VGS=-4.5V Measurement Simulation Error (%) R DS (on) 24.000 m 24.000 m 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 7. Gate Charge Characteristic Circuit Simulation result -20V -16V -12V -8V -4V 0V 0 8n 16n 24n 32n 40n V(W1:2) Time*1ms Evaluation circuit V2 0Vdc ION = 0uA TPCF8102 IOFF = 1m W D1 - I1 = 0 + I2 I1 Dbreak I2 = 1m W1 TD = 0 -6Adc TR = 10n TF = 10n PW = 600u V1 PER = 1000u -16Vdc 0 Simulation Result VDD=-16V,ID=-6.0A Measurement Simulation Error (%) ,VGS=-5V Qgs 4.000 nC 4.000 nC 0.000 Qgd 5.000 nC 5.000 nC 0.000 Qg 19.000 nC 16.956 nC -10.758 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.200 200.000 198.000 -1.000 0.500 160.700 159.000 -1.058 1.000 127.000 125.000 -1.575 2.000 93.000 91.000 -2.151 5.000 55.000 54.450 -1.000 10.000 37.000 36.000 -2.703 20.000 23.000 22.700 -1.304 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 9. Switching Time Characteristic Circuit Simulation result -12V VDD =-10V Vg = 0/-5.0V -8V -4V 0V 4.940us 4.980us 5.020us 5.060us 5.094us V(2)*2 V(3) Time Evaluation circuit R1 L2 V3 2 3 4.7 30nH 0Vdc V1 = 0 L1 TPCF8102 V1 V2 = -10 TD = 5u R2 50nH TR = 6n TF = 6n 4.7 PW = 5u PER = 10u RL 0 0 3.33 VDD -10.05 0 0 Simulation Result ID=-3.0A, VDD=-10V Measurement Simulation Error(%) VGS=0/-5V ton 13.000 ns 13.576 ns 4.431 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 10. Output Characteristic Circuit Simulation result -10A -2.0V -8A -1.9V -1.8V -6A -1.7V -4A -16V -1.5V -2A VGS=-1.4V 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V I(V3) V_V2 Evaluation circuit TPCF8102 V3 0Vdc V1 -4.5Vdc V2 -10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 11. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result -20A -1.0A 0V 0.4V 0.8V 1.2V 1.6V 2.0V I(V2) V_V3 Evaluation Circuit R1 0.01m TPCF8102 V2 0Vdc 0Vdc V3 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 12. Comparison Graph Circuit Simulation Result Simulation Result VDS (V) VDS (V) IDR (A) Measurement Simulation %Error -1.000 0.690 0.697 1.014 -2.000 0.730 0.740 1.370 -5.000 0.810 0.813 0.370 -10.000 0.890 0.894 0.449 -20.000 1.010 1.019 0.891 -1.000 0.690 0.697 1.014 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 0A -400mA 14.88us 14.96us 15.04us 15.12us 15.20us I(R1) Time Evaluation Circuit R1 50 V1 = {-9.7} V2 = {10.6} TD = 24.546n V1 TR = 10n TF = 10n PW = 15u TPCF8102 PER = 100u 0 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 8.800 ns 8.808 ns 0.091 trb 31.200 ns 45.098 ns 44.545 trr 40.000 ns 53.906 ns 34.765 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 14. Reverse Recovery Characteristic Reference Trj=8.8(ns) Trb=31.2(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V I(R1) V_V1 Evaluation Circuit R1 0.01m OPEN OPEN OPEN V1 OPEN TPCF8102 0Vdc R2 1MEG 0 OPEN OPEN OPEN 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005