Welcome to
Training
ON PROCESS AND MANUFACTURING OF
SOLAR PANEL
:- Rohit K
Abhishek
Learning Agenda
Process Workflow
Machine Overview &
Output
Module defect,
Criteria & effects
Quality Inspection points and
their importance
BOM Specification
& Details
Process Parameters
Working of Critical
Machines
07
06
05
04
03
02
01
Flowchart Production : -
SEALANT DISPENSING
START
TAPING
FIXING
AUTO CELL
TAPING
DISPATCH
Cell Parameters: -
Parameter
Specification
p-PERC Bi-Facial (PERC+) Pseudo
Square (PSQ)
10 Busbar - 10BB
182 ± 0.25 mm
Cell Type
Wafer Geometry Type
No. Bus Bar (No's)
Length and width of cell
Corner length (PSQ) 8.4± 0.5 mm
195
icron, -
17.3 ± 0.1 mm
Thickness of cell (incl. paste @ back/front of cell) /+20
Distance between two bus bar (Ctr. to Ctr.) BB-Pitch
Non-metal open area laser cutting (Front side) >1.1 mm
Width of Bus bar in non-contact point segments 0.06 ± 0.03 mm
Non-metal open area laser cutting (Front side) >1.1 mm
Width of Bus bar in non-contact point segments 0.06 ± 0.03 mm
Back Side of Cell
Currently we are using p-Perc cells of 182mm from SunFlower & AICKO Solar.
Total contact points is 12 in full cell and 6 in half cell.No of pads in rear side of cell –
8(Full cell) 4(Half cell) Busbar width – 0.32mm
Front Side of Cell
Front Side of cell :- (-) Negative Side
Back Side of cell :- (+) Positive Side
Cell features :-
Cell Electrical Characteristics :-
Laser Cell Cutting: -
Full Cell
Half Cut Cell
Input Output
Laser Cell Cutting - Machine Specification: -
ATW PV Cell Cutting Machine – LTS100C
How laser cutting works?
The machine cuts solar cell into half in 3 steps:
Slotting
Scribing
Thermal Crack
Make- Wuxi Auto-well Technology Inc. Ltd
Model- ATW - LTS100C PV Cell Laser Cutting Machine
Purpose- To cut the solar cell into half MSEL - 2 machine will feed 4
Stringer Laser Type - IR 1064nm
Output – This Laser cutter has output of 4800cells/hour/track.
i.e 9600cells/hour
Temperature - 85±10
Laser Cell Cutting - Process: -
Thermal Laser
Laser Slotter
Water Spray
Cutting Plate
138mm
Slotting Process –
In slotting, the cell will be cutat
the starting and end of the cell
at 20% - 50% of the cell depth.
Slotting laser power should be
80 % - 85%
Scribing Process –
In Scribing, the cell is 1/3rd
portion of cutting in-
depth is cut by thermal laser.
Thermal Laser power should be
50% - 60%.
Thermal Crack –
Final cutting of cell is done
through water spray by thermal
crack. The water pressure
should be 0.1-0.2 Bar.
Water jet spray position is 3mm
back from the center of the
Laser beam.
Laser Cell Cutting - Cell Cutting Dimension: -
Full Cell Dimension – 182±0.25 mm *
182±0.25 mm
Half Cell Dimension – 182±0.25 mm *
91±0.2mm
Laser Cell Cutting - Uses of Half Cut cell: -
Reduce power loss
When the cell is cut in half, the current produced will be half, thus
the resistance will be 1/4th of the full cell.
Which also increases current output, hence increase module power.
Low CTM Loss.
Increase In partial shading tolerance
Solar cells are cut in half, thereby reduced in size, have more cells on the
panel than traditional panels do. The panel itself is then split in half so
that the top and bottom portions operate as two separate panels
When one string is shadowed – Around 30% of power is lost in full cell
due to string bypass, but as in half cut module, both upper and lower half of
module works as separate panel, only 15% energy is lost.
Low chances of hotspot
In half cut cells, due to higher number of busbars low resistance it will
provide better heat dissipation eventually leading to less hot- spot.
Also, as there are more cells to spread the excess heat, hot-spots will be less
damaging.
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Construction Difference Between Standard & Perc Solar Cell
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Construction Difference Between TOPCON n - type & p - type Solar
Cell
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Construction Difference Between P type& N type Solar Cell
• As a main difference, in n-type semiconductors, the electrons have a negative
charge, hence the name n-type. While in p-type, the effect of a positive charge is
generated in the absence of an electron, hence the name p-type.
• In a p-type semiconductor, the III group element of the periodic table is added as
a doping element, while in n-type the doping element is the V group element.
• In a p-type semiconductor, the majority carriers are holes, and the minority
carriers are electrons. But In the n-type semiconductor, electrons are the majority
carriers, and holes the minority carriers.
• The electron density is much greater than the hole density in the n-type
semiconductor represented as ne >> nh whereas, in the p-type semiconductor,
the hole density is much greater than the electron density: nh >> ne.
• In an n-type semiconductor, the donor energy level is close to the conduction
band and away from the valence band. While in the p-type semiconductor, the
acceptor energy level is close to the valence band and away from the conduction
band.
• The impurity added in p-type semiconductor provides extra holes
known as Acceptor atoms, whereas in n-type semiconductor impurity
provides extra electrons called Donor atoms.
• The Fermi level of the n-type semiconductor rests between the donor
energy level and the conduction band while that of the p-type
semiconductor is between the acceptor energy level and the valence
band.
• In the p-type semiconductor, majority carriers move from higher to
lower potential, in contrast to the n-type where the majority carriers
move from lower to higher potential.
• Trivalent impurities such as Aluminium, Boron, Gallium, and Indium
are added in the p-type semiconductor, whereas in the n-type
semiconductor, Pentavalent impurities like Arsenic, Antimony,
Phosphorus and Bismuth are applied. [5]
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CHEMICAL CONSTRUCTION OF PERC & Bi PERC CELL
Half Cut Cells
12 Half-Cut Cells Stringed together
ATW STRINGER MS100B : -
Soldering
unit
Pre-heat base plate
Holding base plate
Combined plates
Soldering base plate
MS100B MBB PV Cell Soldering Stringer is a fully automatic
machine used to solder the mono-Si
or poly-Si cells into a string. The entire process from cell feed to
string outlet is fully automated.
Stringer Output and Parameters : -
Total Lamps in Stringer = 12 Lamps
Total Active lamps for 10BB Cells =
09Light Intensity of Lamps = 55% -
65%
Output of ATW MS100B Stringer is 5700cells/Hour
5700 cells = 450 Strings/hour
Total Strings which can be produced in 1 Shift 450*8 = 3600 Strings
Total No. of modules per shift,Per Stringer = 300 Modules/shift
Total Strings which can be produced per day 10800 Strings
Which means in 3 shifts,1 stringer can produce 10800/12 Module
= 900 Module
So, Every year one stringer can make 900*365 Modules
= 320,000Modules Apx
2272 ± 1 mm
Stringer Output and Parameters : -
Important Dimensions
Sr
No
Description Size(mm)
1 Gap between cell edge to glass edge(width side) 13.5±1
2 Gap between cell edge to glass edge(Top & bottom side) 22±1
3 Gap between string interconnect to glass edge(Top & bottom side) 14±1
4 Gap between cell to string interconnect (Top & bottom side) 4±1
5 Gap between cell to cell (Middle) 15±1
6 Gap between cell to string interconnect (Middle) 4±1
7 Gap between cell to cell 0.8±0.2
8 Gap between string to string 1.8±0.2
9 Width of string interconnect (Top & bottom side) 4±0.1
10 Width of string interconnect (Middle) 7±0.1
Auto Bussing &Auto cell Taping : -
STRING LAYUP - ROBO
Auto Bussing
Cell interconnect placement and
soldering is done automatically
in Auto Bussing process
60 Tapes
Total - 144 Cells
6 Strings * 12 Cells
= 72 Cells
6 Strings * 12 Cells
= 72 Cells
Auto Bussing – Process and Parameters : - How Does Auto Bussing works?
o After the layup in ATW Stringer, the module goes into the Auto-bussing machine
o There are 288 vacuums (144*2) which picks up the strings.
o Then the machine cuts connectors automatically and robot places the connectors on glass.
i) There are 3 i-cons top and bottom sides, and 4 L-cons (2 long, 2Short) in the middle.
ii)Middle Connector is thicker than the I-connectors,
Middle dimension – 0.38 x 7.00mm Top/Bottom side – 0.38 x 4.00mm
o After the interconnectors are placed, vacuum releases the strings on the connectors.
o Then, String soldering is done through induction process. (5A & 15V)
Width
marking, i.e
4mm,5mm,6
mm etc
Auto Bussing HMI Parameters : -
Back EVA , Back-sheet , Bar-code ad Logo Placement : -
Back-sheet Placement
Back EVA placement
Layup with barcode and logo
placement
EVA & Backsheet dimensions
In process Check-Points :
 Lot detail/ Make/Specification and Time of loading entry
in logbook.
 Front EVA in Front( PID resistance ) and Back EVA in
Back .( UV cutoff )
 Maintaining EVA and Back sheet Pitch dimension as per
Drawing.
 Back sheet scratch not allowed
Importance :
 To monitor the consumption time of EVA ( 8 hours) once unpacked &
to Back trace the lot detail and make in case of nonconformity.
Back EVA in Front : No PID resistance will result Reliability issue. Front
EVA in back : back sheet damage.
 Pitch Dimension variation will result string to string short during
EVA/back sheet Placing.
 Back sheet Scratch/Damage will impact the Reliability of module
Process Flow-Pre lam Inspection to Triming : -
Ok
Not
Ok
Ok
Pre-Lam Criteria and Related Risks : -
SL Defect Reference Image Rework/Acceptance with conditions Related risks
1 Edge Chip V chip)- not allowed
U chip - 1.Length > 10mm; width > 0.5mm is not allowed.
2.Chip touch the busbar not allowed
Edge chipping will propagate crack which
may lead to power loss.
2 Pin-holes in cell Not allowed, send laminate for Rework Electron will get accumulated around the
pin-hole(void) area which might cause
Hotspot defect.
3 Ribbon Misalignment/ Ribbon
Missing
Not allowed, send laminate for Rework Current will not pass through the ribbon
which may result Power loss at that
particular area.
4 Ribbon Tilt/bend Not allowed, send laminate for Rework May generate cell crack during
lamination process.
SL Defect Reference Image
Rework/Acceptance with conditions
Related risks
5
Interconnect to Ribbon Soldering Miss
Not allowed, send laminate for Rework May create hotspot
6
Not allowed, send laminate for Rework
Extra Ribbon Extra ribbon may led to string to
sting short result Low power
7
Cell to Cell Gap
if touch not allowed send laminate for rework
Heat generate at the area which
may result in hot spot.
8
String Misalignment
String misalignment > 2.0 mm (Single glass),
String misalignment > 3 mm ,send laminate for
rework
Aesthetic defect
SL Defect Reference Image Rework/Acceptance with conditions Related risks
9 Crack in cell Not allowed, send laminate for Rework Over the time the crack will propagate
and affect the module performance
10 Broken cell but no cell piece on
cell
Not allowed, send laminate for Rework Affect the module performance.
Pre-Lam Criteria and Related Risks : -
SL Defect Reference Image Rework/Acceptance with conditions Related risks
1 Cell micro cracks with and
without dark area
Send laminate for Rework if,
1-Micro crack length>1/6 of cell length,
2-Micro crack run across the cell not accepted3-
micro crack leads to dark area which is >5%of total cell
area
4- Any microcrack crossing busbar
Over the time the crack will propagate
and affect the module performance
2 Cross Crack on cell surface Starting Point > 10mm – not allowed send laminate
for rework
Over the time the crack will propagate
and affect the module performance
3 Fish bone / Star / Spider Micro
Crack
Not allowed, send laminate for rework Over the time the crack will propagate
and affect the module performance
4 Dark cell due to shorting of
busbar, shorting between
interconnector and cells or
shunting of cells
Not allowed, send laminate for rework No current will flow in the cell result in
power loss.
Pre-Lam Criteria and Related Risks : -
SL Defect Reference Image Rework/Acceptance with conditions Related risks
5 Bright/Dark area Not allowed, send laminate for rework Accumulation of excess current May
create hot spot over long run.
6 Dark Area on cell surface Area >8% not allowed, send laminate for rework Aesthetic defect
7 Dark Spot (A small round shape
dark spot without legs extension
as like cross
crack)
Send laminate for Rework if,
1.Cluster or dark spot Qty > 4 dark spots beyond 100
mm2 is not allowed.
2.2. Dark spot with legs extension as like
cross crack is not allowed.
Dark spot is Aesthetic defect. Cross crack
may led to power loss in long run
8 Dark cell Edges area of black edge/corner > 10% area of cell is not
allowed send laminate for rework.
Aesthetic defect
In process Check-Points :
Rework string storage as Per efficiency wise & OK NOT string shouldbe kept
separate with identification.
Rework Heating plate temperature verification. 60+/- 10 degree.
Soldering machine temperature verification.
Flux change to be done once per shift.
String handling to avoid wastage.
Usage of Gloves during rework process.
 chance to generate micro cracks in cell
No Solder flicks should be observed on cell.
 Excess Flux mark on cell will result in aesthetic
defect
Verification of String rework method.
 Flux should be applied in vertical direction on
busbar.
Importance :
 Mix efficiency module will result power Loss. & Usage of not ok string will
result in resources and time loss
 to avoid stress during removal of Ribbon, which may lead to micro crack
and result resource and time loss to the organization.
 Open/ Partial joint led to Poor Soldering defect in EL .
 Flux residue will evaporate result into poor bonding between ribbon
to Cell.
 Cell wastage.
.
 Finger mark which will downgrade the module
Pre-Lam Criteria and Related Risks : -
LOADING
HEAT
LAMINATING
SECTION 1
HEAT
LAMINATING
SECTION 2
COOLING
SYSTEM
UNLOADING
Make : Boost solar Photovoltaic Equipment co. ltd.
Laminators follow the following 3-step process for proper melting and
curing of the encapsulant (EVA)and achieving a good quality laminate:
1.Heating of the module lay-up to required temperatures to perform
the EVA cross-linkingstep.
2.Applying a vacuum to remove the air and other volatiles to prevent
bubbles.
3.Application of pressure to ensure a good surfacecontact and
adhesion between the different layersof the PV module.
Pre-Lam Criteria and Related Risks : -
Total No. of Laminators =2 2 Double Decker
Output of Double laminator(when using POE) is 14/Hour, i.e. aprox. 7 modules per 30 minutes. (For backsheet – 7 per 30
minutes)Output of double decker is 14x2 = 28modules/hour.
Benefits: i)Double decker laminator saves space. It Provides twice the output in the same space.
ii) It also saves machinery cost and operating cost. It doesn’t require two separate layup machine for feeding of modules.
iii) Saves Time : It reduces the WIP inventory and don’t let the process be a bottleneck.
Gel Content Test - EVA 75% to 95%
Adhesion – EVA to backsheet >40N/cm
Lamination
Adhesion – EVA to Glass >60N/cm
Temperature Non-Uniformity <3°C
Lamination Process : -
Lamination Process Parameter: -
Framing Process : -
Frames are loaded into the slot in the sequence – Long(1), Short(2), Short(3) &
Long(4) Which are automatically used by framing robot.
If the frames are loaded in wrong orientation, the machine
will sense and give an alarm
Two glue drums are connected to machine for gluing of
frames.
Both the drums glues 1Long and 1Short frame.
Parameters and glue quantity are updated and verified
through HMI.
At the beginning, glue uniformity and air voids are checked.
At the end of the shift, both the glue dispenser nozzle should be in Oil cup to prevent
nozzle jamming.
Drum - 2
Drum-1
Auto-Framing process : -
In process Check-Points :
 Nozzle should be clean and no damage, it should be
changed after every 4 hours.
 Frames after gluing must be used within 5 minutes.
 Anodizing thickness of frames must be ≥ 15 micron
and black spots in anodizing thickness are not
allowed.
 Compliance verification of framing and sealant
weight.
• Long frame 104±15 gm
• Short frame 48±10 gm
 Frame scratch, frame corner gap and
misalignment.
• Deviation - ≤0.5mm ,B side
displacement≤0.5mm
• Gap - Front/Side≤0.5mm ,Backside(flange side)
≤0.8mm
Importance :
 Porosity and non-uniform sealant dispense
 Adhesion with module and field load sustainability
 To protect frames from unnecessary wear and damage, also it makes frame corrosion
resistant.
 It will ensure proper frame fixing and minimize defects and complaints due to frames.
 Module breakage, module deformation and customer complaints due to
installation issue
JB Potting Process : -
JB Glue Pipe
Dispensing Nozzle JB Gluing station
 For JB Fixing purpose, JB Glue directly comes through pipe from framing drum.
 Cable length is 300mm.
 There are 3 Jb used – Positive, Middle and Negative.
 Why is 3 JB Used?
3 Jb’s are used in 144 cells 10BB module as there is only 15±1mm gap between top & bottom half which makes it
impossible to use traditional jb size without affecting the module performance, Using 3 JB’s will prevent
shading of cells so that it will not affect power output shading of cells.
JB Soldering Process : -
Make – Suzhou Automation Technology Co. Ltd
Purpose – Auto JB Soldering
Auto-JB Soldering is based on the working
principle of mutual induction,where induction
coil works as a primary coil and JB works as a
secondary coil. A Soldering current of 15±2A
andvoltage 5±1V is passed through all 3 coils
producing heat.
Ceramic Pin is used to press the connector
forsoldering.
Induction coil is hollow ,in which coolant
flows continuously to keep the temp. Of
induction coil low to prevent damage and
breakdown.
Equipment Cycle Time – 23 Second
Output – 120 Modules/Hour
Total Machines – 2 Machine/Line
Module Out
Induction Coil
(Copper)
CCD Camera
Module In
Image From the image,
machine will check the
JB for orientation of
middle JB, and any
foreign particle or glue
on any JB. And will
allow only if all
parameters are ok.
Process Flow -JB Fixing & JB Soldering : -

.
Checking Points JB Fixing & JB Soldering : -
In process Check-Points:
Compliance Verification of JB Fixing Weight set as per specification.
Visual check .
 Correct Polarity.
 No sealant on interconnect.
 Should not be Tilt or lift.
 Sealant uniformity
 Use of Masking tape to hold JB position
Importance:
Less weight or non –uniform weight will led tofailure of .
 Wet Leakage test
 JB Pull test
 Wrong Polarity led to No/Low power and hence increase in
Rework activity.
 Presences of Sealantoninterconnectmay led toPoor soldering.
 Tilt/Lift will led to aesthetic defect and terminaltwist may led to
power loss during long run.
 Deployment of Authorized operator for JB Fixing.
 Compliance of soldering Parameter set as per specification
 Masking tape will hold the JB position to avoid Tilt during
transit.
High Power voltage
 Low power voltage
 Soldering current
 Soldering Time
 Cooling time
.
 Soldering quality check .
 Welding area should be fully covered aftersoldering
 Deployment of Authorized operator for JB Soldering.
 Poor JB Soldering will led to increase in sitecomplaint during
Operation condition .
 No power
 Low power
 JB burnout
JB potting Process parameter : -
Potting Nozzle –
One nozzle fills all 3
jb
Sealant weight for each of 3 JB for Sunter Junction box = 8±2gms And for
Tonson1533 potting glue, potting ratio
= (5.5±0.4):1
Whereas,
Sealant weight for each of 3 JB for DASh Junction box = 11±2gms and for
Tonson1533 potting glue, potting ratio = (5.5±0.4):1
JB potting Process Check points : -
In process Check-Points :
 Compliance Verification of JB Potting Sealant Ratio &
Weight set as per specification.
 Dispensing Nozzle should be changed after every 4
hours or Found damage or extra amount dispensing.
 Dispensing Nozzle position should be aligned with
the JB Position.
 Visual check after potting .
Importance :
Potting will not cure and during operating condition in site the
potting will melt and led to customer complaint.
Overflow/less dispensing of JB weight.
 Glue should completely cover the diode and
interconnecting ribbon.
 Dispensing will flow outside the JB, led to resource and
time loss.
 Which will led to poor insulation, Noncompliance of IP68
& Wet leakage test failure.
.
Process Flow Post Laminator stage : -
Auto Curing : -
A controlled environment chamber is used for curing to maintain the temp. and RH ,
In the curing chamber, relative humidity (RH) and temperature is maintained easily for the compliance of industrial standards.
•Relative humidity(RH) : 70% - 85% • 1 Curing conveyor can hold : 30modules X 24 stacks = 720 modules at a time
•Temperature ≤ 27 C
⁰
In process Check-Points :
 Ambient temperature of curing chamber.
Importance :
Sealant property to dry properly with specified RH and
temp. within cycle time. Properly cured module at final
testing station saving production losses.
• Relative humidity(RH) ≤ 75%
• Temperature ≤ 27 C
⁰
 Curing time between curing and cleaning should be
≤4hr
 Module defects such as presence of sealant, module
scratch, porosity, clamp marks on glue and uncleaned
modules.
 Proper drying of sealants and potting glue.
 Early identification of generating defects for
minimizing rejection, also saving time and
resources.
Sun Simulator Stage : -
This black box is Reference module buffer beside the sun simulator. No manual handling of reference module is required for
calibration of Gsolar sun simulator.
Model GIV-20A2616
Radiation Area in class A 2600 x 1600mm
Area Illuminated (testing area) 2600 x 1600mm
Class AAA+
Illuminator Xenon
Number of Xenon Lamp 4
Sun Simulator Feautures : -
Features of G-Solar : Xenon lamp lights Sun simulator
Sun Simulator Parameters : -
Repeatability & Reproducibility of Sun-simulator
Sun - Simulator In process Check points : -
In process Check-Points :
Module temp must be between 25 ± 2 °C during Flash.
Importance :
Power variation
 To eliminate machine variation.
 Irradiance issue .
 Calibration of Sun simulator once per shift.
 Back Label Content and printing Verification as per
standard.
Back label printer
 Monitoring Flash count to ensure lamp Life
 Verification of bronze/Gold module Condition and its
storage.
 Verification of EL image for Bronze/Gold Module.
 CSV data and IV curve data should be saved online.
 Preventive maintenance to be carried out as per schedule.
 Pin and spring condition of Contact point.
 Contact block resistance/condition verification
 Should be kept in black box to avoid Power degradation.
 Power degrade due to crack.
 Data storage
 Health condition of machine
 Contact block and Carbon deposition will impact on
power due to high resistance.
HI-POT Tester : -
What is the testing condition of Hipot tester:
•As per IEC 60950, The Basic test Voltage for Hi-pot test is the
2X (Operating Voltage) + 1000 V
•The reason for using 1000 V as part of the basic formula is that the insulation in any product can be
subjected to normal day-to-day transient over voltages.
•Experiments and research have shown that these over voltages can be as high as 1000 V
Types of Hipot testing in Solar module:
1. Direct current withstand: DC
2. Insulation resistance test: IR
3. Ground continuity test: GD
HI-POT Tester Criteria : -
Passing Criteria (For system voltage 1500V; Cell type: M10-182; Module Size 2272x1134mm; Fuse Rating 25A):
Passing Criteria (For system voltage 1500V; Cell type: M10-182; Module Size 2272x1134mm; Bifacial, Fuse Rating 30A):
Test Parameters Criteria
Ground Continuity Test Current: 62.5 A (2.5 times of over current
protection rating of module) Time: 2s
<0.1Ω
Insulation Resistance test Voltage: 1500V
Ramp up Time: 3 sec @ 500 V/sec Dwell
Time: 1s
>22 MΩ
DC Current Leakage Test Test Voltage: 4800V
Ramp up Time: 10 sec @ 500 V/sec Dwell
Time: 1s
Leakage current should be <50µA
Test Parameters Criteria
Ground Continuity Test Current: 75 A (2.5 times of over current
protection rating of module) Time: 2s
<0.1Ω
Insulation Resistance test Voltage: 1500V
Ramp up Time: 3 sec @ 500 V/sec Dwell
Time: 1s
>22 MΩ
DC Current Leakage Test Test Voltage: 4800V
Ramp up Time: 10 sec @ 500 V/sec Dwell
Time: 1s
Leakage current should be <50µA
HI-POT Tester Check points : -
In process Check-Points : Importance :
Hipot M/c Functional check, NG Modules should show NG
before handing over for production.
Test should be conducted for each and every module,
modules should not be bypassed.
Verification of Hi-pot testing process parameters.
• Ground continuity test should be as per IEC/UL
criteria, i.e 62.5A (2.5times of over current
protection rating of module.)
• Insulation resistance test – voltage :1500V ramp up
time : 3sec
• DC current leakage test – Test voltage: 4800V, Ramp
up time : 10 sec
Non conforming and unsafe modules could be
passed even after all testing.
Non conforming modules can lead to fatal in-field
injuries.
Testing should be done according to IEC/MNRE
standards, otherwise it could lead to safety related
issues.
Final EL & Packing : -
Corner
Insertion
Back Label Pasting
Final EL and Visual Inspection
Sorting
Auto Back-Label printing Machine : -
Back-Label printer Side-barcode printer
Auto Back-Label printing Machine : -
4. Printed back label is picked up by vacuum plate
and placed on module.
5. The vacuum plate has several tiny holes by
which the label is picked.
6. There is also a air flow below label to keep the
label in place so that vacuum plate can pick it
easily.
7. In same way side label is printed and fixed on the
module.
Back-label printer
Roller
Vacuum plate
Packing Process : -
In process Check-Points :
Packing list should be matched as per module serial
number
100% Corner cap should be placed with the module
Module frame Dimension as per mention in packing
list Packing as per SOP
Importance :
 Wrong material dispatch to customers.
 Module to module and pallet rubbing. Stability.
 Avoiding any customer complaints and unnecessary resource
consumption.
 Module and box damage due to handling.
 Box condition should be as per sop. Damaged box can
contain damaged module.
Rush handling of finish product by folk lift operator
Packaging box condition. Box should be without any damage.
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PRODUCT ROAD MAP
2006 2008 2012 2022 2023 2024
36 cut cell module
10 WP – 150 WP
36 full cell
150 WP – 180 WP
60 full cell
200 WP – 250 WP
72 full cell
280 WP – 400 WP
144 cut cell module
400 WP – 550 WP
Monofacial
white and Black Back
Sheet
Bifacial Glass to Glass
Transparent back sheet
156 cut cell module
575 WP – 600 WP
132 cut cell module
with 210 mm cell
size
650 WP – 675 WP
Introduce
TOPCon Module
132 cut cell
module
660 WP – 680 WP
www.emmvee.in
• SOLAR CELL CONSTRUCTION
www.emmvee.in
• SOLAR PANEL – PHOTOVOLTAIC EFFECT
www.emmvee.in
• SOLAR PANEL SYSTEM – ON GRID TYPE
www.emmvee.in
• SOLAR PANEL SYSTEM – OFF GRID TYPE
www.emmvee.in
• SOLAR PANEL SYSTEM – HYBRID TYPE
www.emmvee.in
• CHARACTERSTICS OF PHOTOVOLTAIC CELL (IV CURVE)
Thank You
Emmvee Photovoltaic Modules
Emmvee Photovoltaic Modules
Emmvee Group is India’s first integrated solar solutions company,
Incepted in 1992, Emmvee has dedicated itself to developing smart
and innovative solar energy solutions in Thermal and Photovoltaic.
Emmvee Photovoltaic Power Private Limited is the leading manufacturer
and supplier of high quality solar PV panels across the globe.
Emmvee has 1.25 GW module production capacity with 2 state-of-the-
art manufacturing facilities. Emmvee currently produces Monoperc
based mono and bifacial solar PV modules and polycrystalline modules.
Robust manufacturing process design, Multi-stage EL testing with AI,
stringent quality control systems and strong commitment towards delivery.
Head quartered in Bangalore, Sales network in all major cities, Dealers
across India, Modules providing valuable and sustainable alternative
power solutions in the field for over 16 years all over the world.
About
Us
68
Milestones
Emmvee Photovoltaic Modules
1992 2001
Emmvee Group
Founded in
Bangalore, India..
Starts Emmvee
Solar System Pvt
Ltd to
manufacture and
distribute
complete Solar
Thermal Systems
Emmvee set up a
state-of-the-art
production plant
for complete solar
thermal systems.
Achieves more
than 25% market
share in India.
2006
Incepted Emmvee
Photovoltaic
Power pvt Ltd.
Introduced
automated line
with 15 MW
capacity
(First in India)
2008
Emmvee opens
international
sales office in
Germany to
supply modules
in Europe
2012
Set-up PV
project
development
and EPC in
India and
Europe
2016
Emmvee
upgrades to
500 MW annual
manufacturing
capacity
2022
Emmvee
Acheives 1250
MW annual
capacity.
Starts new 750
MW PV plant for
M10/G12 range
of PV modules.
2023
Emmvee to
reach 3 GW.
Breaks ground
for new 1750
MW TOPCon
upgradeable
PV plant.
69
From a single line of business, Emmvee Group has transformed itself into a well-diversified group with a strong foothold in
Solar Photovoltaic, Solar Water Heating Systems and Solar Water Pump.
Emmvee Photovoltaic Power Pvt Ltd
Unit 1
• 500 MW Production Capacity
• Air-conditioned Facility with 8,000
Sqm
• Located in Airport Road, Bengaluru
Emmvee Photovoltaic Modules
Emmvee Photovoltaic Power Pvt Ltd
Unit 2
• 750 MW Production Capacity
• Air-conditioned Facility with 20,000
Sqm
• Located in Dabaspet, Bengaluru
Manufacturing Facilities
70
Emmvee Photovoltaic Modules
Expansion Roadmap
15 MW
15 MW
100 MW
165 MW
500 MW
1250 MW
3000 MW
4500 MW
2006 2009 2013 2016 2022 2023 2024
Capacity
Year wise expansion
Under expansion
Future expansion
115 MW
115 MW
50 MW
165 MW
335 MW
500 MW
750 MW
500 MW
1750 MW
1500 MW
3000 MW
1500 MW
Cell Line Capacity
Emmvee Photovoltaic Modules
Among the Top 10
Top 6th
company in module manufacturing capacity
as per the recent ALMM list
Top 7th
company in annual module sales in 2021
as per JMK Research and Analytics Pvt Ltd
www.emmvee.in
A solar panels (also known as "PV panels") is a device that converts light from the sun,
which is composed of particles of energy called "photons", into electricity that can be used to
power electrical loads.
Solar panels can be used for a wide variety of applications including remote power systems
for cabins, telecommunications equipment, remote sensing, and of course for the
production of electricity by residential and commercial solar electric systems.
On this page, we will discuss the history, technology, and benefits of solar panels. We will
learn how solar panels work, how they are made, how they create electricity, and where you
can buy solar panels.
What is a Solar Panel?
www.emmvee.in
What are Photovoltaic Solar Cell?
www.emmvee.in
PHOTOVOLTAIC SYSTEM COMPONENTS
www.emmvee.in
EMMVEE COMPANY PROFILE
www.emmvee.in
EMMVEE COMPANY PROFILE
www.emmvee.in
PHOTOVOLTAIC EFFECTS
www.emmvee.in
SOLAR PANEL–PHOTOVOLTAIC EFFECT
www.emmvee.in
PHOTOVOLTAIC PROCESS
www.emmvee.in
SOLAR PANEL CONSTRUCTION
www.emmvee.in
CHARACTERSTICS OF PHOTOVOLTAIC CELL (IV CURVE)
www.emmvee.in
USES OF HALF CUT CELL
Reduce power loss
When the cell is cut in half, the current produced will be half, thus
the resistance will be 1/4th of the full cell.
Which also increases current output, hence increase module power.
Low CTM Loss.
Increase In partial shading tolerance
Solar cells are cut in half, thereby reduced in size, have more cells on the
panel than traditional panels do. The panel itself is then split in half so
that the top and bottom portions operate as two separate panels
When one string is shadowed – Around 30% of power is lost in full cell
due to string bypass, but as in half cut module, both upper and lower half of
module works as separate panel, only 15% energy is lost.
Low chances of hotspot
In half cut cells, due to higher number of busbars low resistance it will
provide better heat dissipation eventually leading to less hot- spot.
Also, as there are more cells to spread the excess heat, hot-spots will be less
damaging.
www.emmvee.in
Why Solar Energy?
www.emmvee.in
What is Solar Energy?
www.emmvee.in
• Poly crystalline silicon
(also known as multicrystalline silicon).
• Mono crystalline silicon.
• Amorphous silicon.
(abbreviated as "aSi," also known as thin film
silicon).
PV CELLS CLASSIFICATION
www.emmvee.in
POLY CRYSTALLINE SILICON CELL
5BB Poly Solar Cell Diamond Wire
Multi-Si Solar Cell with Diamond Wire five bus bar
Efficiency:-13.0%-16.0%
Diamond Wire Polycrystalline Solar Cell
Dimension:- 156.75mm×156.75mm±0.3mm
Thickness:- 200μm±20μm
Front Side: 0.7mm bus bars(silver), blue anti-
reflecting coating(silicon nitride), ozonation
Back Side: 1.8mmwide soldering pads(silver), back
surface field(aluminum)
Temperature Coefficients :-
Voltage : -0.3%/℃
Current: 0.03%/℃
Power: -0.40%/℃
www.emmvee.in
MONO CRYSTALLINE SILICON CELL
5BB Mono Solar Cell Diamond Wire
Physical Characteristics
Efficiency:-18.0%-20.0%
Dimension :- 156.75 mm x 156.75 mm ± 0.25 mm.
Diagonal :- 210 mm ± 0.5 mm.
Thickness :- (si) 190 µm ± 30 µm .
Front Side :- (-) Silicon nitride anti-reflection coating
0.7 mm silver Bus Bar.
Back Side :- (-) Passivated Emitter(SiON and SiNx dual
layer) Rear Contact 1.8 mm (silver) discontinuous
soldering pads.
Temperature Coefficients :-
Voltage : - 0.03 %/K
Current: -0.35 %/K
Power: -0.41%/K
www.emmvee.in
PHOTOVALTAIC CELL PARAMENTERS
Parameter Specification
p-PERC Bi-Facial
(PERC+) Pseudo Square (PSQ)
10 Busbar - 10BB
182 ± 0.25 mm
Cell Type
Wafer Geometry Type
No. Bus Bar (No's)
Length and width of cell
Corner length (PSQ) 8.4± 0.5 mm
195
icron, -
17.3 ± 0.1 mm
Thickness of cell (incl. paste @ back/front of cell) /+20
Distance between two bus bar (Ctr. to Ctr.) BB-Pitch
Non-metal open area laser cutting (Front side) >1.1 mm
Width of Bus bar in non-contact point segments 0.06 ± 0.03 mm
Non-metal open area laser cutting (Front side) >1.1 mm
Width of Bus bar in non-contact point segments 0.06 ± 0.03 mm
(+) Back Side of Cell
Currently we are using p-Perc cells of 182mm from SunFlower & AICKO Solar.
Total contact points is 12 in full cell and 6 in half cell.No of pads in rear side of cell –
8(Full cell) 4(Half cell) Busbar width – 0.32mm
(-) Front Side of Cell
www.emmvee.in
Construction Difference Between Standard & Perc Solar Cell
www.emmvee.in
Construction Difference Between TOPCON n - type & p - type Solar
Cell
www.emmvee.in
Construction Difference Between P type& N type Solar Cell
• As a main difference, in n-type semiconductors, the electrons have a negative
charge, hence the name n-type. While in p-type, the effect of a positive charge is
generated in the absence of an electron, hence the name p-type.
• In a p-type semiconductor, the III group element of the periodic table is added as
a doping element, while in n-type the doping element is the V group element.
• In a p-type semiconductor, the majority carriers are holes, and the minority
carriers are electrons. But In the n-type semiconductor, electrons are the majority
carriers, and holes the minority carriers.
• The electron density is much greater than the hole density in the n-type
semiconductor represented as ne >> nh whereas, in the p-type semiconductor,
the hole density is much greater than the electron density: nh >> ne.
• In an n-type semiconductor, the donor energy level is close to the conduction
band and away from the valence band. While in the p-type semiconductor, the
acceptor energy level is close to the valence band and away from the conduction
band.
• The impurity added in p-type semiconductor provides extra holes
known as Acceptor atoms, whereas in n-type semiconductor impurity
provides extra electrons called Donor atoms.
• The Fermi level of the n-type semiconductor rests between the donor
energy level and the conduction band while that of the p-type
semiconductor is between the acceptor energy level and the valence
band.
• In the p-type semiconductor, majority carriers move from higher to
lower potential, in contrast to the n-type where the majority carriers
move from lower to higher potential.
• Trivalent impurities such as Aluminium, Boron, Gallium, and Indium
are added in the p-type semiconductor, whereas in the n-type
semiconductor, Pentavalent impurities like Arsenic, Antimony,
Phosphorus and Bismuth are applied. [5]
www.emmvee.in
CHEMICAL CONSTRUCTION OF PERC & Bi PERC CELL
www.emmvee.in
Electrical Parameters at STC Of a Cell
www.emmvee.in
FRONT SIDE of Cell :- (-) Negative Side
www.emmvee.in
BACK SIDE of Cell :- (+) Positive Side
www.emmvee.in
CELL FEATURES
www.emmvee.in
CELL CUTTING DIMENSION
Full Cell Dimension – 182±0.25 mm *
182±0.25 mm
Half Cell Dimension – 182±0.25 mm *
91±0.2mm
www.emmvee.in
SOLAR PANEL SYSTEM – ON GRID TYPE
www.emmvee.in
SOLAR PANEL SYSTEM – OFF GRID TYPE
www.emmvee.in
SOLAR PANEL SYSTEM – HYBRID TYPE
www.emmvee.in
DISADVANTAGES OF SOLAR ENERGY
www.emmvee.in
EVOLUTION OF SOLAR PANEL
www.emmvee.in
Emmvee Solar PV Modules are the best for On - Grid solar power plants. Our
modules are built to withstand extreme harsh weather conditions and sustain
for more than 25 years.
Features
• High reliability with guaranteed +5Wp power output tolerance, ensuring ROI
• Withstands high wind-pressure and snow load (passed 5400Pa mechanical
loading test), and extreme temperature variations
• Performance classes from 265Wp to 395Wp | • Frame 35 mm | • PID free
• Expecting the order for 540Wp & 660Wp
• 10 Years Product warranty & 25 years Linear Power warranty
• 60/72/132/144 multi/mono PERC/bifacial solar cells with multi bus bars
PV MODULE - Mono Perc, Multi & Bi-facial Module
www.emmvee.in
Emmvee AC Solar Module with an inbuilt inverter will eliminate
interrupted power at your homes. These modules convert the DC
power to AC power.
Features
• 72 Mono PERC and polycrystalline solar cells with 5 bus bars
• Module performance classes from 325 to 395Wp
• Inverter performance classes from 295VA
• Front glass 3.2 mm and 4mm high transmission, tempered glass
• High reliability with guaranteed +5Wp power output tolerance,
ensuring ROI
• Withstands high wind-pressure and snow load (passed 5400Pa
mechanical loading test), and extreme temperature variations
• Built in Enphase micro inverter
PV MODULE - AC
www.emmvee.in
Emmvee Bifacial PV Modules have the unique ability to produce electricity from
direct sunlight exposure, as well as from reflective light that has passed through the
panels.
Features
•High reliability with guaranteed +5Wp power output tolerance, ensuring ROI
•Withstands high wind-pressure and snow load (passed 5400Pa mechanical loading
test), and extreme temperature variations
•60/72/120/144 Bi-facial solar cells
•Performance classes from 295 to 310Wp shortly we will be offering 540Wp & 660Wp
•Glass to Glass module and Glass to transparent back sheet module
•2 mm high transmission, tempered glass x 2no’s
PV MODULE – Bi-facial
www.emmvee.in
PV MODULE
Emmvee Solar PV Modules are the best for On - Grid solar power plants. Our modules are built to withstand extreme
harsh weather conditions and sustain for more than 30 years.
Features
• High reliability with guaranteed +5Wp power output tolerance,
ensuring ROI
• Withstands high wind-pressure and snow load (passed 5400 Pa
mechanical loading test), and extreme temperature variations
• We are now offering 540Wp and 545Wp & will be offering
660Wp in near future.
• 12 Years Product warranty & 25/30 years Linear Power warranty
• 108/132/120/144 MonoPERC Mono/bifacial solar cells with
multi busbars
www.emmvee.in
PRODUCT ROAD MAP
2006 2008 2012 2022 2023 2024
36 cut cell module
10 WP – 150 WP
36 full cell
150 WP – 180 WP
60 full cell
200 WP – 250 WP
72 full cell
280 WP – 400 WP
144 cut cell module
400 WP – 550 WP
Monofacial
white and Black Back
Sheet
Bifacial Glass to Glass
Transparent back sheet
156 cut cell module
575 WP – 600 WP
132 cut cell module
with 210 mm cell
size
650 WP – 675 WP
Introduce
TOPCon Module
132 cut cell
module
660 WP – 680 WP

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Training Program for knowledge in solar cell and solar industry

  • 1. Welcome to Training ON PROCESS AND MANUFACTURING OF SOLAR PANEL :- Rohit K Abhishek
  • 2. Learning Agenda Process Workflow Machine Overview & Output Module defect, Criteria & effects Quality Inspection points and their importance BOM Specification & Details Process Parameters Working of Critical Machines 07 06 05 04 03 02 01
  • 3. Flowchart Production : - SEALANT DISPENSING START TAPING FIXING AUTO CELL TAPING DISPATCH
  • 4. Cell Parameters: - Parameter Specification p-PERC Bi-Facial (PERC+) Pseudo Square (PSQ) 10 Busbar - 10BB 182 ± 0.25 mm Cell Type Wafer Geometry Type No. Bus Bar (No's) Length and width of cell Corner length (PSQ) 8.4± 0.5 mm 195 icron, - 17.3 ± 0.1 mm Thickness of cell (incl. paste @ back/front of cell) /+20 Distance between two bus bar (Ctr. to Ctr.) BB-Pitch Non-metal open area laser cutting (Front side) >1.1 mm Width of Bus bar in non-contact point segments 0.06 ± 0.03 mm Non-metal open area laser cutting (Front side) >1.1 mm Width of Bus bar in non-contact point segments 0.06 ± 0.03 mm Back Side of Cell Currently we are using p-Perc cells of 182mm from SunFlower & AICKO Solar. Total contact points is 12 in full cell and 6 in half cell.No of pads in rear side of cell – 8(Full cell) 4(Half cell) Busbar width – 0.32mm Front Side of Cell
  • 5. Front Side of cell :- (-) Negative Side
  • 6. Back Side of cell :- (+) Positive Side
  • 9. Laser Cell Cutting: - Full Cell Half Cut Cell Input Output
  • 10. Laser Cell Cutting - Machine Specification: - ATW PV Cell Cutting Machine – LTS100C How laser cutting works? The machine cuts solar cell into half in 3 steps: Slotting Scribing Thermal Crack Make- Wuxi Auto-well Technology Inc. Ltd Model- ATW - LTS100C PV Cell Laser Cutting Machine Purpose- To cut the solar cell into half MSEL - 2 machine will feed 4 Stringer Laser Type - IR 1064nm Output – This Laser cutter has output of 4800cells/hour/track. i.e 9600cells/hour Temperature - 85±10
  • 11. Laser Cell Cutting - Process: - Thermal Laser Laser Slotter Water Spray Cutting Plate 138mm Slotting Process – In slotting, the cell will be cutat the starting and end of the cell at 20% - 50% of the cell depth. Slotting laser power should be 80 % - 85% Scribing Process – In Scribing, the cell is 1/3rd portion of cutting in- depth is cut by thermal laser. Thermal Laser power should be 50% - 60%. Thermal Crack – Final cutting of cell is done through water spray by thermal crack. The water pressure should be 0.1-0.2 Bar. Water jet spray position is 3mm back from the center of the Laser beam.
  • 12. Laser Cell Cutting - Cell Cutting Dimension: - Full Cell Dimension – 182±0.25 mm * 182±0.25 mm Half Cell Dimension – 182±0.25 mm * 91±0.2mm
  • 13. Laser Cell Cutting - Uses of Half Cut cell: - Reduce power loss When the cell is cut in half, the current produced will be half, thus the resistance will be 1/4th of the full cell. Which also increases current output, hence increase module power. Low CTM Loss. Increase In partial shading tolerance Solar cells are cut in half, thereby reduced in size, have more cells on the panel than traditional panels do. The panel itself is then split in half so that the top and bottom portions operate as two separate panels When one string is shadowed – Around 30% of power is lost in full cell due to string bypass, but as in half cut module, both upper and lower half of module works as separate panel, only 15% energy is lost. Low chances of hotspot In half cut cells, due to higher number of busbars low resistance it will provide better heat dissipation eventually leading to less hot- spot. Also, as there are more cells to spread the excess heat, hot-spots will be less damaging.
  • 14. www.emmvee.in Construction Difference Between Standard & Perc Solar Cell
  • 15. www.emmvee.in Construction Difference Between TOPCON n - type & p - type Solar Cell
  • 16. www.emmvee.in Construction Difference Between P type& N type Solar Cell • As a main difference, in n-type semiconductors, the electrons have a negative charge, hence the name n-type. While in p-type, the effect of a positive charge is generated in the absence of an electron, hence the name p-type. • In a p-type semiconductor, the III group element of the periodic table is added as a doping element, while in n-type the doping element is the V group element. • In a p-type semiconductor, the majority carriers are holes, and the minority carriers are electrons. But In the n-type semiconductor, electrons are the majority carriers, and holes the minority carriers. • The electron density is much greater than the hole density in the n-type semiconductor represented as ne >> nh whereas, in the p-type semiconductor, the hole density is much greater than the electron density: nh >> ne. • In an n-type semiconductor, the donor energy level is close to the conduction band and away from the valence band. While in the p-type semiconductor, the acceptor energy level is close to the valence band and away from the conduction band. • The impurity added in p-type semiconductor provides extra holes known as Acceptor atoms, whereas in n-type semiconductor impurity provides extra electrons called Donor atoms. • The Fermi level of the n-type semiconductor rests between the donor energy level and the conduction band while that of the p-type semiconductor is between the acceptor energy level and the valence band. • In the p-type semiconductor, majority carriers move from higher to lower potential, in contrast to the n-type where the majority carriers move from lower to higher potential. • Trivalent impurities such as Aluminium, Boron, Gallium, and Indium are added in the p-type semiconductor, whereas in the n-type semiconductor, Pentavalent impurities like Arsenic, Antimony, Phosphorus and Bismuth are applied. [5]
  • 18. Half Cut Cells 12 Half-Cut Cells Stringed together ATW STRINGER MS100B : - Soldering unit Pre-heat base plate Holding base plate Combined plates Soldering base plate MS100B MBB PV Cell Soldering Stringer is a fully automatic machine used to solder the mono-Si or poly-Si cells into a string. The entire process from cell feed to string outlet is fully automated.
  • 19. Stringer Output and Parameters : - Total Lamps in Stringer = 12 Lamps Total Active lamps for 10BB Cells = 09Light Intensity of Lamps = 55% - 65% Output of ATW MS100B Stringer is 5700cells/Hour 5700 cells = 450 Strings/hour Total Strings which can be produced in 1 Shift 450*8 = 3600 Strings Total No. of modules per shift,Per Stringer = 300 Modules/shift Total Strings which can be produced per day 10800 Strings Which means in 3 shifts,1 stringer can produce 10800/12 Module = 900 Module So, Every year one stringer can make 900*365 Modules = 320,000Modules Apx
  • 20. 2272 ± 1 mm Stringer Output and Parameters : - Important Dimensions Sr No Description Size(mm) 1 Gap between cell edge to glass edge(width side) 13.5±1 2 Gap between cell edge to glass edge(Top & bottom side) 22±1 3 Gap between string interconnect to glass edge(Top & bottom side) 14±1 4 Gap between cell to string interconnect (Top & bottom side) 4±1 5 Gap between cell to cell (Middle) 15±1 6 Gap between cell to string interconnect (Middle) 4±1 7 Gap between cell to cell 0.8±0.2 8 Gap between string to string 1.8±0.2 9 Width of string interconnect (Top & bottom side) 4±0.1 10 Width of string interconnect (Middle) 7±0.1
  • 21. Auto Bussing &Auto cell Taping : - STRING LAYUP - ROBO Auto Bussing Cell interconnect placement and soldering is done automatically in Auto Bussing process 60 Tapes Total - 144 Cells 6 Strings * 12 Cells = 72 Cells 6 Strings * 12 Cells = 72 Cells
  • 22. Auto Bussing – Process and Parameters : - How Does Auto Bussing works? o After the layup in ATW Stringer, the module goes into the Auto-bussing machine o There are 288 vacuums (144*2) which picks up the strings. o Then the machine cuts connectors automatically and robot places the connectors on glass. i) There are 3 i-cons top and bottom sides, and 4 L-cons (2 long, 2Short) in the middle. ii)Middle Connector is thicker than the I-connectors, Middle dimension – 0.38 x 7.00mm Top/Bottom side – 0.38 x 4.00mm o After the interconnectors are placed, vacuum releases the strings on the connectors. o Then, String soldering is done through induction process. (5A & 15V) Width marking, i.e 4mm,5mm,6 mm etc
  • 23. Auto Bussing HMI Parameters : -
  • 24. Back EVA , Back-sheet , Bar-code ad Logo Placement : - Back-sheet Placement Back EVA placement Layup with barcode and logo placement EVA & Backsheet dimensions
  • 25. In process Check-Points :  Lot detail/ Make/Specification and Time of loading entry in logbook.  Front EVA in Front( PID resistance ) and Back EVA in Back .( UV cutoff )  Maintaining EVA and Back sheet Pitch dimension as per Drawing.  Back sheet scratch not allowed Importance :  To monitor the consumption time of EVA ( 8 hours) once unpacked & to Back trace the lot detail and make in case of nonconformity. Back EVA in Front : No PID resistance will result Reliability issue. Front EVA in back : back sheet damage.  Pitch Dimension variation will result string to string short during EVA/back sheet Placing.  Back sheet Scratch/Damage will impact the Reliability of module
  • 26. Process Flow-Pre lam Inspection to Triming : - Ok Not Ok Ok
  • 27. Pre-Lam Criteria and Related Risks : - SL Defect Reference Image Rework/Acceptance with conditions Related risks 1 Edge Chip V chip)- not allowed U chip - 1.Length > 10mm; width > 0.5mm is not allowed. 2.Chip touch the busbar not allowed Edge chipping will propagate crack which may lead to power loss. 2 Pin-holes in cell Not allowed, send laminate for Rework Electron will get accumulated around the pin-hole(void) area which might cause Hotspot defect. 3 Ribbon Misalignment/ Ribbon Missing Not allowed, send laminate for Rework Current will not pass through the ribbon which may result Power loss at that particular area. 4 Ribbon Tilt/bend Not allowed, send laminate for Rework May generate cell crack during lamination process.
  • 28. SL Defect Reference Image Rework/Acceptance with conditions Related risks 5 Interconnect to Ribbon Soldering Miss Not allowed, send laminate for Rework May create hotspot 6 Not allowed, send laminate for Rework Extra Ribbon Extra ribbon may led to string to sting short result Low power 7 Cell to Cell Gap if touch not allowed send laminate for rework Heat generate at the area which may result in hot spot. 8 String Misalignment String misalignment > 2.0 mm (Single glass), String misalignment > 3 mm ,send laminate for rework Aesthetic defect
  • 29. SL Defect Reference Image Rework/Acceptance with conditions Related risks 9 Crack in cell Not allowed, send laminate for Rework Over the time the crack will propagate and affect the module performance 10 Broken cell but no cell piece on cell Not allowed, send laminate for Rework Affect the module performance.
  • 30. Pre-Lam Criteria and Related Risks : - SL Defect Reference Image Rework/Acceptance with conditions Related risks 1 Cell micro cracks with and without dark area Send laminate for Rework if, 1-Micro crack length>1/6 of cell length, 2-Micro crack run across the cell not accepted3- micro crack leads to dark area which is >5%of total cell area 4- Any microcrack crossing busbar Over the time the crack will propagate and affect the module performance 2 Cross Crack on cell surface Starting Point > 10mm – not allowed send laminate for rework Over the time the crack will propagate and affect the module performance 3 Fish bone / Star / Spider Micro Crack Not allowed, send laminate for rework Over the time the crack will propagate and affect the module performance 4 Dark cell due to shorting of busbar, shorting between interconnector and cells or shunting of cells Not allowed, send laminate for rework No current will flow in the cell result in power loss.
  • 31. Pre-Lam Criteria and Related Risks : - SL Defect Reference Image Rework/Acceptance with conditions Related risks 5 Bright/Dark area Not allowed, send laminate for rework Accumulation of excess current May create hot spot over long run. 6 Dark Area on cell surface Area >8% not allowed, send laminate for rework Aesthetic defect 7 Dark Spot (A small round shape dark spot without legs extension as like cross crack) Send laminate for Rework if, 1.Cluster or dark spot Qty > 4 dark spots beyond 100 mm2 is not allowed. 2.2. Dark spot with legs extension as like cross crack is not allowed. Dark spot is Aesthetic defect. Cross crack may led to power loss in long run 8 Dark cell Edges area of black edge/corner > 10% area of cell is not allowed send laminate for rework. Aesthetic defect
  • 32. In process Check-Points : Rework string storage as Per efficiency wise & OK NOT string shouldbe kept separate with identification. Rework Heating plate temperature verification. 60+/- 10 degree. Soldering machine temperature verification. Flux change to be done once per shift. String handling to avoid wastage. Usage of Gloves during rework process.  chance to generate micro cracks in cell No Solder flicks should be observed on cell.  Excess Flux mark on cell will result in aesthetic defect Verification of String rework method.  Flux should be applied in vertical direction on busbar. Importance :  Mix efficiency module will result power Loss. & Usage of not ok string will result in resources and time loss  to avoid stress during removal of Ribbon, which may lead to micro crack and result resource and time loss to the organization.  Open/ Partial joint led to Poor Soldering defect in EL .  Flux residue will evaporate result into poor bonding between ribbon to Cell.  Cell wastage. .  Finger mark which will downgrade the module
  • 33. Pre-Lam Criteria and Related Risks : - LOADING HEAT LAMINATING SECTION 1 HEAT LAMINATING SECTION 2 COOLING SYSTEM UNLOADING Make : Boost solar Photovoltaic Equipment co. ltd. Laminators follow the following 3-step process for proper melting and curing of the encapsulant (EVA)and achieving a good quality laminate: 1.Heating of the module lay-up to required temperatures to perform the EVA cross-linkingstep. 2.Applying a vacuum to remove the air and other volatiles to prevent bubbles. 3.Application of pressure to ensure a good surfacecontact and adhesion between the different layersof the PV module.
  • 34. Pre-Lam Criteria and Related Risks : - Total No. of Laminators =2 2 Double Decker Output of Double laminator(when using POE) is 14/Hour, i.e. aprox. 7 modules per 30 minutes. (For backsheet – 7 per 30 minutes)Output of double decker is 14x2 = 28modules/hour. Benefits: i)Double decker laminator saves space. It Provides twice the output in the same space. ii) It also saves machinery cost and operating cost. It doesn’t require two separate layup machine for feeding of modules. iii) Saves Time : It reduces the WIP inventory and don’t let the process be a bottleneck.
  • 35. Gel Content Test - EVA 75% to 95% Adhesion – EVA to backsheet >40N/cm Lamination Adhesion – EVA to Glass >60N/cm Temperature Non-Uniformity <3°C Lamination Process : -
  • 37. Framing Process : - Frames are loaded into the slot in the sequence – Long(1), Short(2), Short(3) & Long(4) Which are automatically used by framing robot. If the frames are loaded in wrong orientation, the machine will sense and give an alarm Two glue drums are connected to machine for gluing of frames. Both the drums glues 1Long and 1Short frame. Parameters and glue quantity are updated and verified through HMI. At the beginning, glue uniformity and air voids are checked. At the end of the shift, both the glue dispenser nozzle should be in Oil cup to prevent nozzle jamming. Drum - 2 Drum-1
  • 38. Auto-Framing process : - In process Check-Points :  Nozzle should be clean and no damage, it should be changed after every 4 hours.  Frames after gluing must be used within 5 minutes.  Anodizing thickness of frames must be ≥ 15 micron and black spots in anodizing thickness are not allowed.  Compliance verification of framing and sealant weight. • Long frame 104±15 gm • Short frame 48±10 gm  Frame scratch, frame corner gap and misalignment. • Deviation - ≤0.5mm ,B side displacement≤0.5mm • Gap - Front/Side≤0.5mm ,Backside(flange side) ≤0.8mm Importance :  Porosity and non-uniform sealant dispense  Adhesion with module and field load sustainability  To protect frames from unnecessary wear and damage, also it makes frame corrosion resistant.  It will ensure proper frame fixing and minimize defects and complaints due to frames.  Module breakage, module deformation and customer complaints due to installation issue
  • 39. JB Potting Process : - JB Glue Pipe Dispensing Nozzle JB Gluing station  For JB Fixing purpose, JB Glue directly comes through pipe from framing drum.  Cable length is 300mm.  There are 3 Jb used – Positive, Middle and Negative.  Why is 3 JB Used? 3 Jb’s are used in 144 cells 10BB module as there is only 15±1mm gap between top & bottom half which makes it impossible to use traditional jb size without affecting the module performance, Using 3 JB’s will prevent shading of cells so that it will not affect power output shading of cells.
  • 40. JB Soldering Process : - Make – Suzhou Automation Technology Co. Ltd Purpose – Auto JB Soldering Auto-JB Soldering is based on the working principle of mutual induction,where induction coil works as a primary coil and JB works as a secondary coil. A Soldering current of 15±2A andvoltage 5±1V is passed through all 3 coils producing heat. Ceramic Pin is used to press the connector forsoldering. Induction coil is hollow ,in which coolant flows continuously to keep the temp. Of induction coil low to prevent damage and breakdown. Equipment Cycle Time – 23 Second Output – 120 Modules/Hour Total Machines – 2 Machine/Line Module Out Induction Coil (Copper) CCD Camera Module In Image From the image, machine will check the JB for orientation of middle JB, and any foreign particle or glue on any JB. And will allow only if all parameters are ok.
  • 41. Process Flow -JB Fixing & JB Soldering : -
  • 42.  . Checking Points JB Fixing & JB Soldering : - In process Check-Points: Compliance Verification of JB Fixing Weight set as per specification. Visual check .  Correct Polarity.  No sealant on interconnect.  Should not be Tilt or lift.  Sealant uniformity  Use of Masking tape to hold JB position Importance: Less weight or non –uniform weight will led tofailure of .  Wet Leakage test  JB Pull test  Wrong Polarity led to No/Low power and hence increase in Rework activity.  Presences of Sealantoninterconnectmay led toPoor soldering.  Tilt/Lift will led to aesthetic defect and terminaltwist may led to power loss during long run.  Deployment of Authorized operator for JB Fixing.  Compliance of soldering Parameter set as per specification  Masking tape will hold the JB position to avoid Tilt during transit. High Power voltage  Low power voltage  Soldering current  Soldering Time  Cooling time .  Soldering quality check .  Welding area should be fully covered aftersoldering  Deployment of Authorized operator for JB Soldering.  Poor JB Soldering will led to increase in sitecomplaint during Operation condition .  No power  Low power  JB burnout
  • 43. JB potting Process parameter : - Potting Nozzle – One nozzle fills all 3 jb Sealant weight for each of 3 JB for Sunter Junction box = 8±2gms And for Tonson1533 potting glue, potting ratio = (5.5±0.4):1 Whereas, Sealant weight for each of 3 JB for DASh Junction box = 11±2gms and for Tonson1533 potting glue, potting ratio = (5.5±0.4):1
  • 44. JB potting Process Check points : - In process Check-Points :  Compliance Verification of JB Potting Sealant Ratio & Weight set as per specification.  Dispensing Nozzle should be changed after every 4 hours or Found damage or extra amount dispensing.  Dispensing Nozzle position should be aligned with the JB Position.  Visual check after potting . Importance : Potting will not cure and during operating condition in site the potting will melt and led to customer complaint. Overflow/less dispensing of JB weight.  Glue should completely cover the diode and interconnecting ribbon.  Dispensing will flow outside the JB, led to resource and time loss.  Which will led to poor insulation, Noncompliance of IP68 & Wet leakage test failure. .
  • 45. Process Flow Post Laminator stage : -
  • 46. Auto Curing : - A controlled environment chamber is used for curing to maintain the temp. and RH , In the curing chamber, relative humidity (RH) and temperature is maintained easily for the compliance of industrial standards. •Relative humidity(RH) : 70% - 85% • 1 Curing conveyor can hold : 30modules X 24 stacks = 720 modules at a time •Temperature ≤ 27 C ⁰ In process Check-Points :  Ambient temperature of curing chamber. Importance : Sealant property to dry properly with specified RH and temp. within cycle time. Properly cured module at final testing station saving production losses. • Relative humidity(RH) ≤ 75% • Temperature ≤ 27 C ⁰  Curing time between curing and cleaning should be ≤4hr  Module defects such as presence of sealant, module scratch, porosity, clamp marks on glue and uncleaned modules.  Proper drying of sealants and potting glue.  Early identification of generating defects for minimizing rejection, also saving time and resources.
  • 47. Sun Simulator Stage : - This black box is Reference module buffer beside the sun simulator. No manual handling of reference module is required for calibration of Gsolar sun simulator. Model GIV-20A2616 Radiation Area in class A 2600 x 1600mm Area Illuminated (testing area) 2600 x 1600mm Class AAA+ Illuminator Xenon Number of Xenon Lamp 4
  • 48. Sun Simulator Feautures : - Features of G-Solar : Xenon lamp lights Sun simulator
  • 49. Sun Simulator Parameters : - Repeatability & Reproducibility of Sun-simulator
  • 50. Sun - Simulator In process Check points : - In process Check-Points : Module temp must be between 25 ± 2 °C during Flash. Importance : Power variation  To eliminate machine variation.  Irradiance issue .  Calibration of Sun simulator once per shift.  Back Label Content and printing Verification as per standard. Back label printer  Monitoring Flash count to ensure lamp Life  Verification of bronze/Gold module Condition and its storage.  Verification of EL image for Bronze/Gold Module.  CSV data and IV curve data should be saved online.  Preventive maintenance to be carried out as per schedule.  Pin and spring condition of Contact point.  Contact block resistance/condition verification  Should be kept in black box to avoid Power degradation.  Power degrade due to crack.  Data storage  Health condition of machine  Contact block and Carbon deposition will impact on power due to high resistance.
  • 51. HI-POT Tester : - What is the testing condition of Hipot tester: •As per IEC 60950, The Basic test Voltage for Hi-pot test is the 2X (Operating Voltage) + 1000 V •The reason for using 1000 V as part of the basic formula is that the insulation in any product can be subjected to normal day-to-day transient over voltages. •Experiments and research have shown that these over voltages can be as high as 1000 V Types of Hipot testing in Solar module: 1. Direct current withstand: DC 2. Insulation resistance test: IR 3. Ground continuity test: GD
  • 52. HI-POT Tester Criteria : - Passing Criteria (For system voltage 1500V; Cell type: M10-182; Module Size 2272x1134mm; Fuse Rating 25A): Passing Criteria (For system voltage 1500V; Cell type: M10-182; Module Size 2272x1134mm; Bifacial, Fuse Rating 30A): Test Parameters Criteria Ground Continuity Test Current: 62.5 A (2.5 times of over current protection rating of module) Time: 2s <0.1Ω Insulation Resistance test Voltage: 1500V Ramp up Time: 3 sec @ 500 V/sec Dwell Time: 1s >22 MΩ DC Current Leakage Test Test Voltage: 4800V Ramp up Time: 10 sec @ 500 V/sec Dwell Time: 1s Leakage current should be <50µA Test Parameters Criteria Ground Continuity Test Current: 75 A (2.5 times of over current protection rating of module) Time: 2s <0.1Ω Insulation Resistance test Voltage: 1500V Ramp up Time: 3 sec @ 500 V/sec Dwell Time: 1s >22 MΩ DC Current Leakage Test Test Voltage: 4800V Ramp up Time: 10 sec @ 500 V/sec Dwell Time: 1s Leakage current should be <50µA
  • 53. HI-POT Tester Check points : - In process Check-Points : Importance : Hipot M/c Functional check, NG Modules should show NG before handing over for production. Test should be conducted for each and every module, modules should not be bypassed. Verification of Hi-pot testing process parameters. • Ground continuity test should be as per IEC/UL criteria, i.e 62.5A (2.5times of over current protection rating of module.) • Insulation resistance test – voltage :1500V ramp up time : 3sec • DC current leakage test – Test voltage: 4800V, Ramp up time : 10 sec Non conforming and unsafe modules could be passed even after all testing. Non conforming modules can lead to fatal in-field injuries. Testing should be done according to IEC/MNRE standards, otherwise it could lead to safety related issues.
  • 54. Final EL & Packing : - Corner Insertion Back Label Pasting Final EL and Visual Inspection Sorting
  • 55. Auto Back-Label printing Machine : - Back-Label printer Side-barcode printer
  • 56. Auto Back-Label printing Machine : - 4. Printed back label is picked up by vacuum plate and placed on module. 5. The vacuum plate has several tiny holes by which the label is picked. 6. There is also a air flow below label to keep the label in place so that vacuum plate can pick it easily. 7. In same way side label is printed and fixed on the module. Back-label printer Roller Vacuum plate
  • 57. Packing Process : - In process Check-Points : Packing list should be matched as per module serial number 100% Corner cap should be placed with the module Module frame Dimension as per mention in packing list Packing as per SOP Importance :  Wrong material dispatch to customers.  Module to module and pallet rubbing. Stability.  Avoiding any customer complaints and unnecessary resource consumption.  Module and box damage due to handling.  Box condition should be as per sop. Damaged box can contain damaged module. Rush handling of finish product by folk lift operator Packaging box condition. Box should be without any damage.
  • 58. www.emmvee.in PRODUCT ROAD MAP 2006 2008 2012 2022 2023 2024 36 cut cell module 10 WP – 150 WP 36 full cell 150 WP – 180 WP 60 full cell 200 WP – 250 WP 72 full cell 280 WP – 400 WP 144 cut cell module 400 WP – 550 WP Monofacial white and Black Back Sheet Bifacial Glass to Glass Transparent back sheet 156 cut cell module 575 WP – 600 WP 132 cut cell module with 210 mm cell size 650 WP – 675 WP Introduce TOPCon Module 132 cut cell module 660 WP – 680 WP
  • 60. www.emmvee.in • SOLAR PANEL – PHOTOVOLTAIC EFFECT
  • 61. www.emmvee.in • SOLAR PANEL SYSTEM – ON GRID TYPE
  • 62. www.emmvee.in • SOLAR PANEL SYSTEM – OFF GRID TYPE
  • 63. www.emmvee.in • SOLAR PANEL SYSTEM – HYBRID TYPE
  • 64. www.emmvee.in • CHARACTERSTICS OF PHOTOVOLTAIC CELL (IV CURVE)
  • 67. Emmvee Photovoltaic Modules Emmvee Group is India’s first integrated solar solutions company, Incepted in 1992, Emmvee has dedicated itself to developing smart and innovative solar energy solutions in Thermal and Photovoltaic. Emmvee Photovoltaic Power Private Limited is the leading manufacturer and supplier of high quality solar PV panels across the globe. Emmvee has 1.25 GW module production capacity with 2 state-of-the- art manufacturing facilities. Emmvee currently produces Monoperc based mono and bifacial solar PV modules and polycrystalline modules. Robust manufacturing process design, Multi-stage EL testing with AI, stringent quality control systems and strong commitment towards delivery. Head quartered in Bangalore, Sales network in all major cities, Dealers across India, Modules providing valuable and sustainable alternative power solutions in the field for over 16 years all over the world. About Us
  • 68. 68 Milestones Emmvee Photovoltaic Modules 1992 2001 Emmvee Group Founded in Bangalore, India.. Starts Emmvee Solar System Pvt Ltd to manufacture and distribute complete Solar Thermal Systems Emmvee set up a state-of-the-art production plant for complete solar thermal systems. Achieves more than 25% market share in India. 2006 Incepted Emmvee Photovoltaic Power pvt Ltd. Introduced automated line with 15 MW capacity (First in India) 2008 Emmvee opens international sales office in Germany to supply modules in Europe 2012 Set-up PV project development and EPC in India and Europe 2016 Emmvee upgrades to 500 MW annual manufacturing capacity 2022 Emmvee Acheives 1250 MW annual capacity. Starts new 750 MW PV plant for M10/G12 range of PV modules. 2023 Emmvee to reach 3 GW. Breaks ground for new 1750 MW TOPCon upgradeable PV plant.
  • 69. 69 From a single line of business, Emmvee Group has transformed itself into a well-diversified group with a strong foothold in Solar Photovoltaic, Solar Water Heating Systems and Solar Water Pump. Emmvee Photovoltaic Power Pvt Ltd Unit 1 • 500 MW Production Capacity • Air-conditioned Facility with 8,000 Sqm • Located in Airport Road, Bengaluru Emmvee Photovoltaic Modules Emmvee Photovoltaic Power Pvt Ltd Unit 2 • 750 MW Production Capacity • Air-conditioned Facility with 20,000 Sqm • Located in Dabaspet, Bengaluru Manufacturing Facilities
  • 70. 70 Emmvee Photovoltaic Modules Expansion Roadmap 15 MW 15 MW 100 MW 165 MW 500 MW 1250 MW 3000 MW 4500 MW 2006 2009 2013 2016 2022 2023 2024 Capacity Year wise expansion Under expansion Future expansion 115 MW 115 MW 50 MW 165 MW 335 MW 500 MW 750 MW 500 MW 1750 MW 1500 MW 3000 MW 1500 MW Cell Line Capacity
  • 71. Emmvee Photovoltaic Modules Among the Top 10 Top 6th company in module manufacturing capacity as per the recent ALMM list Top 7th company in annual module sales in 2021 as per JMK Research and Analytics Pvt Ltd
  • 72. www.emmvee.in A solar panels (also known as "PV panels") is a device that converts light from the sun, which is composed of particles of energy called "photons", into electricity that can be used to power electrical loads. Solar panels can be used for a wide variety of applications including remote power systems for cabins, telecommunications equipment, remote sensing, and of course for the production of electricity by residential and commercial solar electric systems. On this page, we will discuss the history, technology, and benefits of solar panels. We will learn how solar panels work, how they are made, how they create electricity, and where you can buy solar panels. What is a Solar Panel?
  • 82. www.emmvee.in USES OF HALF CUT CELL Reduce power loss When the cell is cut in half, the current produced will be half, thus the resistance will be 1/4th of the full cell. Which also increases current output, hence increase module power. Low CTM Loss. Increase In partial shading tolerance Solar cells are cut in half, thereby reduced in size, have more cells on the panel than traditional panels do. The panel itself is then split in half so that the top and bottom portions operate as two separate panels When one string is shadowed – Around 30% of power is lost in full cell due to string bypass, but as in half cut module, both upper and lower half of module works as separate panel, only 15% energy is lost. Low chances of hotspot In half cut cells, due to higher number of busbars low resistance it will provide better heat dissipation eventually leading to less hot- spot. Also, as there are more cells to spread the excess heat, hot-spots will be less damaging.
  • 85. www.emmvee.in • Poly crystalline silicon (also known as multicrystalline silicon). • Mono crystalline silicon. • Amorphous silicon. (abbreviated as "aSi," also known as thin film silicon). PV CELLS CLASSIFICATION
  • 86. www.emmvee.in POLY CRYSTALLINE SILICON CELL 5BB Poly Solar Cell Diamond Wire Multi-Si Solar Cell with Diamond Wire five bus bar Efficiency:-13.0%-16.0% Diamond Wire Polycrystalline Solar Cell Dimension:- 156.75mm×156.75mm±0.3mm Thickness:- 200μm±20μm Front Side: 0.7mm bus bars(silver), blue anti- reflecting coating(silicon nitride), ozonation Back Side: 1.8mmwide soldering pads(silver), back surface field(aluminum) Temperature Coefficients :- Voltage : -0.3%/℃ Current: 0.03%/℃ Power: -0.40%/℃
  • 87. www.emmvee.in MONO CRYSTALLINE SILICON CELL 5BB Mono Solar Cell Diamond Wire Physical Characteristics Efficiency:-18.0%-20.0% Dimension :- 156.75 mm x 156.75 mm ± 0.25 mm. Diagonal :- 210 mm ± 0.5 mm. Thickness :- (si) 190 µm ± 30 µm . Front Side :- (-) Silicon nitride anti-reflection coating 0.7 mm silver Bus Bar. Back Side :- (-) Passivated Emitter(SiON and SiNx dual layer) Rear Contact 1.8 mm (silver) discontinuous soldering pads. Temperature Coefficients :- Voltage : - 0.03 %/K Current: -0.35 %/K Power: -0.41%/K
  • 88. www.emmvee.in PHOTOVALTAIC CELL PARAMENTERS Parameter Specification p-PERC Bi-Facial (PERC+) Pseudo Square (PSQ) 10 Busbar - 10BB 182 ± 0.25 mm Cell Type Wafer Geometry Type No. Bus Bar (No's) Length and width of cell Corner length (PSQ) 8.4± 0.5 mm 195 icron, - 17.3 ± 0.1 mm Thickness of cell (incl. paste @ back/front of cell) /+20 Distance between two bus bar (Ctr. to Ctr.) BB-Pitch Non-metal open area laser cutting (Front side) >1.1 mm Width of Bus bar in non-contact point segments 0.06 ± 0.03 mm Non-metal open area laser cutting (Front side) >1.1 mm Width of Bus bar in non-contact point segments 0.06 ± 0.03 mm (+) Back Side of Cell Currently we are using p-Perc cells of 182mm from SunFlower & AICKO Solar. Total contact points is 12 in full cell and 6 in half cell.No of pads in rear side of cell – 8(Full cell) 4(Half cell) Busbar width – 0.32mm (-) Front Side of Cell
  • 89. www.emmvee.in Construction Difference Between Standard & Perc Solar Cell
  • 90. www.emmvee.in Construction Difference Between TOPCON n - type & p - type Solar Cell
  • 91. www.emmvee.in Construction Difference Between P type& N type Solar Cell • As a main difference, in n-type semiconductors, the electrons have a negative charge, hence the name n-type. While in p-type, the effect of a positive charge is generated in the absence of an electron, hence the name p-type. • In a p-type semiconductor, the III group element of the periodic table is added as a doping element, while in n-type the doping element is the V group element. • In a p-type semiconductor, the majority carriers are holes, and the minority carriers are electrons. But In the n-type semiconductor, electrons are the majority carriers, and holes the minority carriers. • The electron density is much greater than the hole density in the n-type semiconductor represented as ne >> nh whereas, in the p-type semiconductor, the hole density is much greater than the electron density: nh >> ne. • In an n-type semiconductor, the donor energy level is close to the conduction band and away from the valence band. While in the p-type semiconductor, the acceptor energy level is close to the valence band and away from the conduction band. • The impurity added in p-type semiconductor provides extra holes known as Acceptor atoms, whereas in n-type semiconductor impurity provides extra electrons called Donor atoms. • The Fermi level of the n-type semiconductor rests between the donor energy level and the conduction band while that of the p-type semiconductor is between the acceptor energy level and the valence band. • In the p-type semiconductor, majority carriers move from higher to lower potential, in contrast to the n-type where the majority carriers move from lower to higher potential. • Trivalent impurities such as Aluminium, Boron, Gallium, and Indium are added in the p-type semiconductor, whereas in the n-type semiconductor, Pentavalent impurities like Arsenic, Antimony, Phosphorus and Bismuth are applied. [5]
  • 94. www.emmvee.in FRONT SIDE of Cell :- (-) Negative Side
  • 95. www.emmvee.in BACK SIDE of Cell :- (+) Positive Side
  • 97. www.emmvee.in CELL CUTTING DIMENSION Full Cell Dimension – 182±0.25 mm * 182±0.25 mm Half Cell Dimension – 182±0.25 mm * 91±0.2mm
  • 99. www.emmvee.in SOLAR PANEL SYSTEM – OFF GRID TYPE
  • 103. www.emmvee.in Emmvee Solar PV Modules are the best for On - Grid solar power plants. Our modules are built to withstand extreme harsh weather conditions and sustain for more than 25 years. Features • High reliability with guaranteed +5Wp power output tolerance, ensuring ROI • Withstands high wind-pressure and snow load (passed 5400Pa mechanical loading test), and extreme temperature variations • Performance classes from 265Wp to 395Wp | • Frame 35 mm | • PID free • Expecting the order for 540Wp & 660Wp • 10 Years Product warranty & 25 years Linear Power warranty • 60/72/132/144 multi/mono PERC/bifacial solar cells with multi bus bars PV MODULE - Mono Perc, Multi & Bi-facial Module
  • 104. www.emmvee.in Emmvee AC Solar Module with an inbuilt inverter will eliminate interrupted power at your homes. These modules convert the DC power to AC power. Features • 72 Mono PERC and polycrystalline solar cells with 5 bus bars • Module performance classes from 325 to 395Wp • Inverter performance classes from 295VA • Front glass 3.2 mm and 4mm high transmission, tempered glass • High reliability with guaranteed +5Wp power output tolerance, ensuring ROI • Withstands high wind-pressure and snow load (passed 5400Pa mechanical loading test), and extreme temperature variations • Built in Enphase micro inverter PV MODULE - AC
  • 105. www.emmvee.in Emmvee Bifacial PV Modules have the unique ability to produce electricity from direct sunlight exposure, as well as from reflective light that has passed through the panels. Features •High reliability with guaranteed +5Wp power output tolerance, ensuring ROI •Withstands high wind-pressure and snow load (passed 5400Pa mechanical loading test), and extreme temperature variations •60/72/120/144 Bi-facial solar cells •Performance classes from 295 to 310Wp shortly we will be offering 540Wp & 660Wp •Glass to Glass module and Glass to transparent back sheet module •2 mm high transmission, tempered glass x 2no’s PV MODULE – Bi-facial
  • 106. www.emmvee.in PV MODULE Emmvee Solar PV Modules are the best for On - Grid solar power plants. Our modules are built to withstand extreme harsh weather conditions and sustain for more than 30 years. Features • High reliability with guaranteed +5Wp power output tolerance, ensuring ROI • Withstands high wind-pressure and snow load (passed 5400 Pa mechanical loading test), and extreme temperature variations • We are now offering 540Wp and 545Wp & will be offering 660Wp in near future. • 12 Years Product warranty & 25/30 years Linear Power warranty • 108/132/120/144 MonoPERC Mono/bifacial solar cells with multi busbars
  • 107. www.emmvee.in PRODUCT ROAD MAP 2006 2008 2012 2022 2023 2024 36 cut cell module 10 WP – 150 WP 36 full cell 150 WP – 180 WP 60 full cell 200 WP – 250 WP 72 full cell 280 WP – 400 WP 144 cut cell module 400 WP – 550 WP Monofacial white and Black Back Sheet Bifacial Glass to Glass Transparent back sheet 156 cut cell module 575 WP – 600 WP 132 cut cell module with 210 mm cell size 650 WP – 675 WP Introduce TOPCon Module 132 cut cell module 660 WP – 680 WP