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2SC1969 Transistor Specifications

This document specifies an isc Silicon NPN Power Transistor (model 2SC1969) for high power gain applications in HF band amplifiers requiring 10-14 watts of output power. Key specifications include a minimum power gain of 12dB at 27MHz with 16W output power, maximum ratings of 60V collector-base voltage and 25V collector-emitter voltage, and typical DC current gain between 10-180 and collector efficiency above 60% at 12V and 1W input power. The transistor is rated for operating temperatures from -55°C to 150°C.

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378 views2 pages

2SC1969 Transistor Specifications

This document specifies an isc Silicon NPN Power Transistor (model 2SC1969) for high power gain applications in HF band amplifiers requiring 10-14 watts of output power. Key specifications include a minimum power gain of 12dB at 27MHz with 16W output power, maximum ratings of 60V collector-base voltage and 25V collector-emitter voltage, and typical DC current gain between 10-180 and collector efficiency above 60% at 12V and 1W input power. The transistor is rated for operating temperatures from -55°C to 150°C.

Uploaded by

George Moraru
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

isc Product Specification

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

2SC1969

DESCRIPTION
High Power Gain: Gpe12dB,f= 27MHz, PO= 16W
High Reliability

APPLICATIONS
Designed for 10~14 watts output power class AB amplifiers
applications in HF band.

ABSOLUTE MAXIMUM RATINGS (Ta=25)


SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

VCEO

Collector-Emitter Voltage RBE=

25

VEBO

Emitter-Base Voltage

Collector Current

Collector Power Dissipation


@TC=25

20

IC

PC

Tj
Tstg

Collector Power Dissipation


@Ta=25

1.7

Junction Temperature

150

-55~150

Storage Temperature Range

THERMAL CHARACTERISTICS
SYMBOL

PARAMETER

MAX

UNIT

Rth j-a

Thermal Resistance,Junction to Ambient

73.5

/W

Rth j-c

Thermal Resistance,Junction to Case

6.25

/W

isc Websitewww.iscsemi.cn

isc Product Specification

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

2SC1969

ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified
SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 1mA, IE= 0

60

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 10mA; RBE=

25

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 5mA, IC= 0

ICBO

Collector Cutoff Current

VCB= 30V; IE= 0

0.1

mA

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

0.1

mA

hFE

DC Current Gain

IC= 10mA; VCE= 12V

PO

Output Power

10

180

16

18

60

70

VCC= 12V; Pin= 1W; f= 27MHz


C

Collector Efficiency

hFE Classifications
X

10-25

20-45

35-70

55-110

90-180

isc Websitewww.iscsemi.cn

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