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M.E. ECE Semiconductor Exam

This document contains questions from a 1st semester exam on semiconductor device modeling. It has two sections - Section A contains short answer questions testing basic concepts of PN junction diodes, including drift and diffusion currents, depletion regions, and the diode equation. Section B contains longer answer questions requiring derivations and calculations related to diode characteristics, excess carrier concentrations, trapping levels, and relationships between diode currents. The questions cover topics like drift and diffusion currents, PN junction operation under forward and reverse bias, switching characteristics, grading constants, device modeling, carrier concentrations, probabilities of emission, and relationships between diffusion, reverse saturation and maximum forward currents.

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Gurinder Pal Singh
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42 views3 pages

M.E. ECE Semiconductor Exam

This document contains questions from a 1st semester exam on semiconductor device modeling. It has two sections - Section A contains short answer questions testing basic concepts of PN junction diodes, including drift and diffusion currents, depletion regions, and the diode equation. Section B contains longer answer questions requiring derivations and calculations related to diode characteristics, excess carrier concentrations, trapping levels, and relationships between diode currents. The questions cover topics like drift and diffusion currents, PN junction operation under forward and reverse bias, switching characteristics, grading constants, device modeling, carrier concentrations, probabilities of emission, and relationships between diffusion, reverse saturation and maximum forward currents.

Uploaded by

Gurinder Pal Singh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd

1st Hourly Test

Course with Branch : M.E.-ECESemester : 1st


Subject Code : ECT-610
DEVICE MODELING

Subject : SEMICONDUCTOR
Section A (2 Marks Each)

S.
N
o.
1

Topic/Chapter

Question

10

Why silicon is most preferred semiconductor


for IC design?
Differentiate between intrinsic and extrinsic
semiconductor?
Define drift current?
Derive the expression for drift current
density
Define the term diffusion current? And
develop its expression.
Differentiate between drift and diffusion
currents.
What is depletion region and barrier
potential in PN junction?
What is Reverse saturation current? And
give its expression.
What is the total current at the junction of
pn junction diode?
Derive the diode current equation?

11

what is recovery time? Give its types.

12
13

Define storage and transition time.


What is peak inverse voltage and derive its
expression?
Draw V-I characteristics of pn diode and
expian it.
Define Early Effect.
Show that, when a diode is forward biased the
forward current controls the capacitance
between its terminals
Derive a relationship among turn OFF time,
forward base current and the reverse base
current of a switching pn-junction diode when
switched from ON to OFF.

2
3
4
5
6
7
8
9

14
15
16
17

18
19
20
21

Level
#

Easy
Easy
Easy
Mediu
m
Mediu
m
Easy
Easy
Difficu
lt
Mediu
m
Difficu
lt
Easy
Easy
Easy
Easy
Easy
Mediu
m
Difficu
lt

22
23
24
25
26
27
28
29
30
31
32
33
34
35
S.
No.
1
2
3
4

6
7

Topic

Section B (12 Marks Each)


Question

Level
#

Explain the drift and diffusion currents for PN diode. Mediu


m
And drive every expression.
Explain the operation of PN junction under forward Easy
and reverse bias condition with its characteristics.
Explain details about the switching characteristics on Easy
PN diode with neat Sketch.
(a)
A silicon pn junction diode has the following device Difficu
parameters:
22
-3
-9
2
lt
ND = NA = 1 10 m , junction area = 4 10 m
At a temperature of 300K and reverse bias of 5V, the junction
capacitance is 0.35pF. Find the grading constant of the diode.
(b)
Explain, what does modeling an Electron device means. Discuss in
what way is a device model useful for circuit analysis and simulation.
A semiconductor has an intermediate level 1eV above Mediu
the intrinsic Fermi level. In thermal equilibrium, the
m
electrons move with an energy of 4eV. The majority
and
minority
carrier
concentrations
of
the
semiconductor are 1021 m-3 and 2.251011 m-3
respectively. The intermediate level is due to an
impurity of electron capture cross-sections 10 -20 m2. The
electron effective mass is 1.2510-30 Kg. Calculate the
probability of electron emission from the intermediate
level
A p+n diode is biased to high level of injection. Show Mediu
that the excess carrier concentration in the base
m
decreases with increase in junction area of the diode
The depletion layer of a p+n diode has a trapping level. Mediu
The probability of occupancy of this level is 49%. The
m
electron and hole capture cross-sections are 710-25 m2
and10-25 m2 respectively. For carriers of both polarities
thermal velocity is 107 ms-1. Deriving the equation you
would use, find the probabilities of electron and hole
emissions from the trapping level.
The recombination rate in the depletion region of a
Easy

forward biased diode is given by: R = (np)/[ (n + p)]


Deriving the equation you would use, show that for the
diode, diffusion current Idiff, ideal reverse current I0 and
maximum forward bias recombination current are
related by
Idiff / I0 = [IR / IRO]2
Where IRO = lim (V =>0) IR.
0 = 8.854 10-14 F/m, S = 11.8, Thermal voltage =
26mV, ni = 1.51016 m-3 (Silicon), K=1.3810-23 J/K.
9
10
11
12
13
14
15

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