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Datasheet PDF

The document provides the product specification for the INCHANGE Semiconductor isc Silicon PNP Power Transistor model 2SA671. It has a low collector saturation voltage of -1.0V max at 2.0A collector current and DC current gain of 35-320 at 0.5A collector current. It is designed for use in low frequency power amplifier applications with maximum ratings of -50V collector-emitter voltage, -3A continuous collector current, and 25W power dissipation.

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1K views2 pages

Datasheet PDF

The document provides the product specification for the INCHANGE Semiconductor isc Silicon PNP Power Transistor model 2SA671. It has a low collector saturation voltage of -1.0V max at 2.0A collector current and DC current gain of 35-320 at 0.5A collector current. It is designed for use in low frequency power amplifier applications with maximum ratings of -50V collector-emitter voltage, -3A continuous collector current, and 25W power dissipation.

Uploaded by

Ciacun
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

INCHANGE Semiconductor isc Product Specification

isc Silicon PNP Power Transistor 2SA671

DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(SUS)= -1.0V(Max)@ IC= -2.0A
·DC Current Gain
: hFE= 35-320@ IC= -0.5A
·Complement to Type 2SC1061

APPLICATIONS
·Designed for use in low frequency power amplifier
applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage -50 V

VCEO Collector-Emitter Voltage -50 V

VEBO Emitter-Base Voltage -4 V

IC Collector Current-Continuous -3 A

ICM Collector Current-Peak -6 A

IBB Base Current-Continuous -0.5 A

Total Power Dissipation


PC 25 W
@ TC=25℃

TJ Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

THERMAL CHARACTERISTICS
SYMBOL PARAMETER MAX UNIT

Rth j-c Thermal Resistance,Junction to Case 5.0 ℃/W

isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification

isc Silicon PNP Power Transistor 2SA671

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -50 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA ; IC= 0 -7 V

VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A


B -1.0 V

VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -4V -1.5 V

ICBO Collector Cutoff Current VCB= -25V ; IE= 0 -100 μA

IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -100 μA

hFE-1 DC Current Gain IC= -0.1A ; VCE= -4V 35 320

hFE-2 DC Current Gain IC= -1A ; VCE= -4V 35

fT Current-Gain—Bandwidth Product IC= -0.5A;VCE= -4V; ftest= 1MHz 5 MHz

‹ hFE-1 Classifications

A B C D

35-70 60-120 100-200 160-320

isc Website：www.iscsemi.cn 2

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