MXP4004BT/BE Datasheet

40V N-Channel MOSFET

Applications:
z Power Supply
VDSS RDS(ON) (Max) IDa
z DC-DC Converters
40 V 4.0 mΩ 173 A
Features:
z LeadFree
z Low RDS(ON) to Minimize Conductive Loss
z Low Gate Change for Fast Switching Application
z Optimized BVDSS Capability

Ordering Information
Part Number Package Brand
MXP4004BT TO220 MXP
MXP4004BE TO263 MXP
TO-263
Absolute Maximum Ratings
Tc=25℃ unless otherwise specified
Symbol Parameter Value Units
VDS Drain-to-Source Voltage 40 V
IDa Continuous Drain Current (TC=25℃) 173
A
IDM Pulsed Drain Current @VG=10V 693
EAS Single Pulse Avalanche Energy (L=1mH) 724 mJ
IAS Pulsed Avalanche Energy Figure.9 A
TJ and TSTG Operating Junction and Storage Temperature Range -55 to 175 ℃
a. Calculated continuous current based upon maximum allowable junction temperature, +175℃. Package limitation current is 80A.

OFF Characteristics
TJ=25℃ unless otherwise specified
Symbol Parameter Min Typ Max Units Test Conditions
Drain-to-Source Breakdown
BVDSS 40 V VGS=0V, ID=250µA
Voltage
Drain-to-Source Leakage 1 VDS=32V, VGS=0V
IDSS µA
Current 100 VDS=32V, VGS=0V TJ=125 ℃
Gate-to-Source Forward
100 VGS=+20V
Leakage
IGSS nA
Gate-to-Source Reverse
100 VGS= -20V
Leakage
©MaxPower Semiconductor Inc. 1 MXP4004BT Rev 1.0, Sep 2011
ON Characteristics
TJ=25℃ unless otherwise specified
Symbol Parameter Min Typ Max Units Test Conditions
Static Drain-to-Source
RDS(ON) 2.5 4 mΩ VGS= 10V, ID=24A
On-Resistance
VGS(TH) Gate Threshold Voltage 2 4 V VDS=VGS, ID=250µA

Dynamic Characteristics
Essentially independent of operating temperature
Symbol Parameter Min Typ Max Units Test Conditions
Ciss Input Capacitance 5016
Coss Output Capacitance 787
pF VGS=0V, VDS=20V, f=1.0MHz
Crss Reverse Transfer 292
Capacitance
Qg Total Gate Charge 70
Qgs Gate-to-Source Charge 24
nC VDD=20V, ID=86A, VG=10V
Qgd Gate-to-Drain (“Miller”) 24
Charge
td(on) Turn-on Delay Time 19
tr Rise Time 67
ns VDD=20V, ID=86A, VG=10V,
td(off) Turn-off Delay Time 49 RG=4.7Ω
tf Fall Time 31

Source-Drain Diode Characteristics

Tc=25℃ unless otherwise specified
Symbol Parameter Min Typ Max Units Test Conditions
VSD Diode Forward Voltage 1.2 V IS=24A, VGS=0V
Trr Reverse Recovery Time 51 77 ns
Reverse Recovery IS=38A, di/dt = 100A/μs
Qrr 35 53 nC
Charge

Published by
MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054 All Rights Reserved.
©MaxPower Semiconductor Inc. 2 MXP4004BT Rev 1.0, Sep 2011
 Figure 1. Maximum Power Dissipation V.S Figure 2. Maximum Continuous Drain
Case Temperature Current V.S Case Temperature

160 180
160
140
PD, Power Dissipation(W)

ID, Drain Current(A)

140
120
120
100
100
80
80
60
60
40
40
20 20
0 0
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TC, Case Temperature(℃ ) TC, Case Temperature(℃ )

Figure 3. Typical Output Characteristics Figure 4. Breakdown Voltage V.S

Junction Temperature
30 1.13
VGS=10, 9…7 V
Drain-to-Source Breakdown
25
Voltage (Normalized) 1.08
ID, Drain Current(A)

VGS=6 V
20
1.03
15
0.98
10

5 0.93
VGS=5 V

0 0.88
0 0.5 1 1.5 2 -75 -25 25 75 125 175
VDS, Drain-to Source Voltage(A) TJ, Junction Temperature(℃ )

Figure 5. Threshold Voltage V.S Junction Figure 6. Drain-to-Source Resistance V.S

Temperature Junction Temperature
1.40 1.80
RDS(ON), Drain-to-Source Resistance

1.20 1.60
Vth, Threshold Voltage

1.00
(Normalized)

1.40
(Normalized)

0.80
1.20
0.60
1.00
0.40

0.20 0.80

0.00 0.60
-75 -25 25 75 125 175 -75 -25 25 75 125 175
TJ, Junction Temperature(℃ ) TJ, Junction Temperature(℃ )

©MaxPower Semiconductor Inc. 3 MXP4004BT Rev 1.0, Sep 2011

 Figure 7. Typical Gate Charge vs. Gate-to- Figure 8. Typical Capacitance vs. Drain-to-
Source Voltage Source Voltage
10 7000
9
VGS. Gate-to-Source Voltage(V

6000
8 CISS

C, Capacitance(pF)
7 5000
6
4000
5
4 3000

3 2000
COSS
2
1000
1 CRSS
0 0
0 10 20 30 40 50 60 70 0 10 20 30 40
QG, Gate Charge(nC) VDS, Drain Voltage(V)

Figure 10. Source-Drain Diode Forward

Figure 9. Unclamped Inductive Switching Voltage
Capability 100
1000
Starting TJ=25oC
ISD, Reverse Drain Current(A)
IAS, Avalanche Current(A)

10 TJ=175oC
100

1 TJ=25oC
10

1 0
1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 0.00 0.40 0.80 1.20
tAV, Time in Avalanche(s) VSD, Source-to-Drain Voltage(V)

©MaxPower Semiconductor Inc. 4 MXP4004BT Rev 1.0, Sep 2011

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©MaxPower Semiconductor Inc. 5 MXP4004BT Rev 1.0, Sep 2011