4606

[Link]

N- and P-Channel 30 V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) Definition
• TrenchFET® Power MOSFET
0.018 at VGS = 10 V 8e
• 100 % Rg and UIS Tested
N-Channel 30 0.020 at VGS = 8 V 8e 6.2
• Compliant to RoHS Directive 2002/95/EC
0.024 at VGS = 4.5 V e
8
0.032 at VGS = - 10 V - 8e APPLICATIONS
P-Channel - 30 0.034 at VGS = - 8 V -8 e 18.5 • Motor Drive
0.040 at VGS = - 4.5 V - 7.5 • Mobile Power Bank

D1 S2
SO-8
S1 1 8 D1
G2
G1 2 7 D1
G1
S2 3 6 D2

G2 4 5 D2

S1 D2

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage VDS 30 - 30
V
Gate-Source Voltage VGS ± 20 ± 20
TC = 25 °C 8e - 8e
TC = 70 °C 6.8 - 6.8
Continuous Drain Current (TJ = 150 °C) ID
TA = 25 °C 6.8b, c - 6.6b, c
TA = 70 °C 5.4 b, c
- 5.3b, c
Pulsed Drain Current (10 µs Pulse Width) IDM 40 - 40 A
TC = 25 °C 2.6 - 2.6
Source-Drain Current Diode Current IS
TA = 25 °C 1.6b, c - 1.6b, c
Pulsed Source-Drain Current ISM 40 - 40
Single Pulse Avalanche Current IAS 10 - 20
L = 0.1 mH
Single Pulse Avalanche Energy EAS 5 20 mJ
TC = 25 °C 3.1 3.2
TC = 70 °C 2 2.1
Maximum Power Dissipation PD W
TA = 25 °C 2b, c 2b, c
TA = 70 °C 1.28b, c 1.28b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

N-Channel P-Channel
Parameter Symbol Typ. Max. Typ. Max. Unit
Maximum Junction-to-Ambient b, d t ≤ 10 s RthJA 50 62.5 47 62.5
°C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 29 38
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (n-channel) and 110 °C/W (p-channel).
e. Package limited.

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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ.a Max. Unit
Static
VGS = 0 V, ID = 250 µA N-Ch 30
Drain-Source Breakdown Voltage VDS V
VGS = 0 V, ID = - 250 µA P-Ch - 30
ID = 250 µA N-Ch 40
VDS Temperature Coefficient ΔVDS/TJ
ID = - 250 µA P-Ch - 34
mV/°C
ID = 250 µA N-Ch - 4.1
VGS(th) Temperature Coefficient ΔVGS(th)/TJ
ID = - 250 µA P-Ch 5
VDS = VGS, ID = 250 µA N-Ch 1.0 2.0
Gate Threshold Voltage VGS(th) V
VDS = VGS, ID = - 250 µA P-Ch - 1.0 - 2.0
VDS = 0 V, VGS = ± 12 V N-Ch ± 100
Gate-Body Leakage IGSS nA
VDS = 0 V, VGS = ± 12 V P-Ch ± 100
VDS = 30 V, VGS = 0 V N-Ch 1
VDS = - 30 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current IDSS µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C N-Ch 10
VDS = - 30 V, VGS = 0 V, TJ = 55 °C P-Ch - 10
VDS = 5 V, VGS = 10 V N-Ch 20
On-State Drain Currentb ID(on) A
VDS = - 5 V, VGS = - 10 V P-Ch - 20
VGS = 10 V, ID = 6.8 A N-Ch 0.018
VGS = - 10 V, ID = - 8 A P-Ch 0.040
VGS = 8 V, ID = 6.7 A N-Ch 0.020
Drain-Source On-State Resistanceb RDS(on) Ω
VGS = - 8 V, ID = - 6.5 A P-Ch 0.044
VGS = 4.5 V, ID = 6.6 A N-Ch 0.024
VGS = - 4.5 V, ID = - 5 A P-Ch 0.050
VDS = 15 V, ID = 6.8 A N-Ch 27
Forward Transconductanceb gfs S
VDS = - 15 V, ID = - 6.7 A P-Ch 25
Dynamica
N-Ch 510
Input Capacitance Ciss N-Channel P-Ch 620
VDS = 20 V, VGS = 0 V, f = 1 MHz
N-Ch 95
Output Capacitance Coss pF
P-Ch 115
P-Channel
VDS = - 20 V, VGS = 0 V, f = 1 MHz N-Ch 33
Reverse Transfer Capacitance Crss
P-Ch 57
VDS = 20 V, VGS = 10 V, ID = 10 A N-Ch 6 10
VDS = - 20 V, VGS = - 10 V, ID = - 10 A P-Ch 41.5 63
Total Gate Charge Qg
N-Ch 5.8 7
N-Channel P-Ch 16 22
VDS = 20 V, VGS = 4.5 V, ID = 10 A nC
N-Ch 1.6
Gate-Source Charge Qgs
P-Ch 4.3
P-Channel
VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A N-Ch 1.4
Gate-Drain Charge Qgd
P-Ch 7
N-Ch 0.3 1.1 2.3
Gate Resistance Rg f = 1 MHz Ω
P-Ch 1.2 5.7 9.6

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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ.a Max. Unit
Dynamica
N-Ch 4 8
Turn-On Delay Time td(on) N-Channel P-Ch 10 16
VDD = 20 V, RL = 3.7 Ω
N-Ch 10 17
Rise Time tr ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω
P-Ch 9 15
N-Ch 16 22
Turn-Off Delay Time td(off) P-Channel
VDD = - 20 V, RL = 2 Ω P-Ch 23 26
ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω N-Ch 5 9
Fall Time tf
P-Ch 10 16
ns
N-Ch 10 16
Turn-On Delay Time td(on) N-Channel P-Ch 26 35
VDD = 20 V, RL = 3.7 Ω
N-Ch 11 20
Rise Time tr ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω
P-Ch 16 26
N-Ch 13 22
Turn-Off Delay Time td(off) P-Channel
VDD = - 20 V, RL = 2 Ω P-Ch 16 26
ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω N-Ch 5 9
Fall Time tf
P-Ch 16 26
Drain-Source Body Diode Characteristics
N-Ch 2.6
Continuous Source-Drain Diode Current IS TC = 25 °C
P-Ch - 2.6
A
a
N-Ch 40
Pulse Diode Forward Current ISM
P-Ch - 40
IS = 5.4 A N-Ch 0.81 1.2
Body Diode Voltage VSD V
IS = - 2 A P-Ch - 0.77 - 1.2
N-Ch 12 25
Body Diode Reverse Recovery Time trr ns
P-Ch 31 57
N-Channel N-Ch 10 17
Body Diode Reverse Recovery Charge Qrr IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C nC
P-Ch 29 47

P-Channel N-Ch 10
Reverse Recovery Fall Time ta
IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C P-Ch 13
ns
N-Ch 7
Reverse Recovery Rise Time tb
P-Ch 23
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

40 10
VGS = 10 V thru 4 V

8
30
ID - Drain Current (A)

ID - Drain Current (A)

VGS = 3 V 6

20
TC = 25 °C
4

10
2
TC = 125 °C
TC = - 55 °C

0 0
0 0.5 1 1.5 2 0 0.6 1.2 1.8 2.4 3
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.030 1000

800
0.025
RDS(on) - On-Resistance (Ω)

C - Capacitance (pF)

VGS = 4.5 V
600
Ciss
0.020
VGS = 8 V 400

0.015 VGS = 10 V
200
Crss Coss

0.010 0
0 10 20 30 40 0 10 20 30 40
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current and Gate Voltage Capacitance

10 1.8
ID = 6.8 A ID = 6.8 A
RDS(on) - On-Resistance (Normalized)

1.6
VGS - Gate-to-Source Voltage (V)

8 VDS = 32 V VGS = 10 V; 4.5 V

1.4
6
VDS = 20 V
1.2

4 VDS = 10 V
1.0

2
0.8

0 0.6
0 3 6 9 12 15 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

4
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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.05
ID = 6.8 A

RDS(on) - On-Resistance (Ω)

TJ = 150 °C 0.04
IS - Source Current (A)

10
TJ = 125 °C

0.03

1 TJ = 25 °C
TJ = 25 °C
0.02

0.1 0.01
0.0 0.3 0.6 0.9 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

1.9 60

48
1.6

36
Power (W)
VGS(th) (V)

ID = 250 μA
1.3

24

1
12

0.7 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (°C) Time (s)

Threshold Voltage Single Pulse Power, Junction-to-Ambient

100

Limited by RDS(on)*

10
100 μs
ID - Drain Current (A)

1 ms

1
10 ms

100 ms
0.1
1s
10 s
TA = 25 °C DC
Single Pulse BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient

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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

10

ID - Drain Current (A)

6

0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*

4 1.25

1.0
3

0.75
Power (W)

Power (W)

0.50

1
0.25

0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

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N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1 Notes:
0.1
PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 120 °C/W
3. T JM - T A = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

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P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

40 10

V GS = 10 V thru 4 V
32 8

ID - Drain Current (A)

ID - Drain Current (A)

24 6

16 4
V GS = 3 V
T C = 25 °C
8 2
T C = 125 °C
V GS = 2 V T C = - 55 °C
0 0
0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.090 1000

800
0.070
RDS(on) - On-Resistance (Ω)

C - Capacitance (pF)

VGS = 4.5 V 600

Ciss
0.050
VGS = 8 V 400

VGS = 10 V
0.030
200
Coss
Crss
0.010 0
0 10 20 30 40 0 8 16 24 32 40
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current and Gate Voltage Capacitance

10 1.8
ID = 8 A
ID = 10 A
RDS(on) - On-Resistance (Normalized)

1.6
VGS - Gate-to-Source Voltage (V)

8 V GS = 10 V
V DS = 20 V
1.4
6
V DS = 10 V V GS = 4.5 V
1.2
V DS = 30 V
4
1.0

2
0.8

0 0.6
0 9 18 27 36 45 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

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P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.15

ID = 8 A

10 0.12

RDS(on) - On-Resistance (Ω)

IS - Source Current (A)

T J = 150 °C

1 0.09

0.1 0.06
T J = 25 °C
T J = 125 °C

0.01 0.03

T J = 25 °C
0.001 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

0.8 50

40
0.5
ID = 250 μA
VGS(th) Variance (V)

30
Power (W)

0.2 ID = 5 mA

20

- 0.1
10

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (°C) Time (s)

Threshold Voltage Single Pulse Power, Junction-to-Ambient

100

Limited by RDS(on) *
10
ID - Drain Current (A)

1 ms

1
10 ms

100 ms
0.1
1s
TA = 25 °C 10 s
Single Pulse DC
BVDSS Limited
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient

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P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

10

ID - Drain Current (A)

6

0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*

4.0 1.5

3.2 1.2

2.4 0.9
Power (W)
Power (W)

1.6 0.6

0.8 0.3

0.0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
TC - Case Temperature (°C) TA - Ambient Temperature (°C)

Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

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P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1

Duty Cycle = 0.5

Normalized Effective Transient
Thermal Impedance

0.2

0.1 Notes:
0.1
PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 110 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 1000
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

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SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

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RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(6.248) (0.711)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

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Disclaimer
All products due to improve reliability, function or design or for other reasons, product specifications and
data are subject to change without notice.

Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their
representatives ( collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or
incomplete data contained in the table or any other any disclosure of any information related to
the product.([Link])

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product features in the products described in the specification is appropriate for use in a particular application.
Parameter data sheets and technical specifications can be provided may vary depending on the application and
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Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be
R oHS compliant and meets the definition of restrictions under Directive of the European Parliament
2011/65 / EU, 2011 Nian. 6. 8 R i Yue restrict the use of certain hazardous substances in electrical and
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Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We
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Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as
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