SEMICONDUCTOR KN3904

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.
B C

FEATURES
ᴌLow Leakage Current

A
: ICEX=50nA(Max.), @VCE=30V, VEB=3V.
ᴌLow Saturation Voltage N DIM MILLIMETERS
E A 4.70 MAX
K
: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA. G B 4.80 MAX
C 3.70 MAX
ᴌComplementary to KN3906. D
D 0.45

J
E 1.00
F 1.27
G 0.85
H 0.45
H J _ 0.50
14.00 +
F K 0.55 MAX
MAXIMUM RATING (Ta=25ᴱ) F
L 2.30
M 0.45 MAX
CHARACTERISTIC SYMBOL RATING UNIT N 1.00
1 2 3

C
L
VCBO

M
Collector-Base Voltage 60 V
1. EMITTER
Collector-Emitter Voltage VCEO 40 V 2. BASE
3. COLLECTOR
Emitter-Base Voltage VEBO 6 V
Collector Current IC 200 mA
TO-92
Base Current IB 50 mA
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ

1996. 1. 28 Revision No : 0 1/3

 KN3904

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEX VCE=30V, VEB=3V - - 50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=10Ọ
A, IE=0 60 - - V
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=1mA, IB=0 40 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10ỌA, IC=0 6 - - V
hFE(1) VCE=1V, IC=0.1mA 40 - -
hFE(2) VCE=1V, IC=1mA 70 - -
DC Current Gain * hFE(3) VCE=1V, IC=10mA 100 - 300
hFE(4) VCE=1V, IC=50mA 60 - -
hFE(5) VCE=1V, IC=100mA 30 - -
VCE(sat)1 IC=10mA, IB=1mA - - 0.2
Collector-Emitter Saturation Voltage * V
VCE(sat)2 IC=50mA, IB=5mA - - 0.3
VBE(sat)1 IC=10mA, IB=1mA 0.65 - 0.85
Base-Emitter Saturation Voltage * V
VBE(sat)2 IC=50mA, IB=5mA - - 0.95
Transition Frequency fT VCE=20V, IC=10mA, f=100MHz - 300 - MHz
Collector Output Capacitance Cob VCB=5V, IE=0, f=1MHz - - 4.0 pF
* Pulse Test : Pulse Width⏊300Ọ
S, Duty Cycle⏊2%.

1996. 1. 28 Revision No : 0 2/3

 KN3904

h FE - I C C ob - V CB
240 5
V CE =1V I E =0
f=1MHz
200
DC CURRENT GAIN h FE

CAPACITANCE C ob (pF)
4

160
3
120
2
80

1
40

0 0
0.1 0.3 1 3 10 30 100 1 3 10 30 100 200

COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE V CB (V)

V BE(sat) ,V CE(sat) - I C Pc - Ta
10 700
COLLECTOR POWER DISSIPATION

I C /I B =10
5
600
SATURATION VOLTAGE

3
V BE(sat) ,VCE(sat) (V)

VBE(sat) 500
1
PC (mW)

0.5 400
0.3
300
0.1
200
0.05 VCE(sat)
0.03 100

0.01 0
0.1 0.3 1 3 10 30 100 0 25 50 75 100 125 150 175

COLLECTOR CURRENT I C (mA) AMBIENT TEMPERATURE Ta ( C)

1996. 1. 28 Revision No : 0 3/3