IT2140E – Electronics for Information Technology lab DCE-SOICT-HUST
LAB 5: CURRENT-VOLTAGE CHARACTERISTIC OF BIPOLAR
JUNCTION TRANSISTOR (BJT)
Group: 7
Members Student ID
Lê Đức Anh 202417097
Nông Hoàng Anh 202417093
Đặng Xuân Bách 202417099
Đỗ Huy Du 202417108
1. Goals
Understand the working principle of a BJT.
Verify the current-voltage (V-A) characteristic of a BJT.
Build up a switch circuit by using a BJT.
2. Exercises
Exercise 1. Investigate the current-voltage characteristic of a BJT (2N2222) in a Common-
Emitter amplifier circuit as shown in Figure 1.
(a) (b)
Figure 1. Common-Emitter amplifier circuit (a) and V-A characteristic of the BJT (b)
Requirements:
Implement the circuit in Figure 1 with a resistor (RB = 94 kΩ) and a transistor
2N2222. Use a DC power supply to provide VBB (input voltage) = 3V, VCC = 10V.
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IT2140E – Electronics for Information Technology lab DCE-SOICT-HUST
Use a multimeter to measure the base current (IB) and the collector current (IC) of the
transistor. Compute the common emitter current gain, 𝛽 = of the transistor.
IB = 25.2μA IC = 8.14mA
Answer: As the recorded current of IC is 8.14mA and of IB is 25.2μA, we have:
𝐼 8.14 × 10
𝛽= = ≈ 323
𝐼 25.2 × 10
Keep VBB = 3V so that IB is unchanged, and then gradually reduce VCC from 9V to
0V (e.g., 9V, 8V, …, 1V, 0.9V, ..., 0.1V, 0V). For each value of VCC, use a
multimeter to measure IC. Record the measured data.
Repeat the above procedure with V BB = 5V, VBB = 4V, VBB = 2V, and VBB = 1V,
respectively.
Measured data:
VBB (V) VCC (V) IC (mA)
9 1.71
8 1.69
7 1.67
6 1.63
5 1.6
1
4 1.56
3 1.52
2 1.47
1 1.42
0.9 1.41
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0.8 1.4
0.7 1.39
0.6 1.39
0.5 1.38
0.4 1.37
0.3 1.36
0.2 1.34
0.1 1.13
VBB (V) VCC (V) IC (mA)
9 5.8
8 5.74
7 5.66
6 5.55
5 5.45
4 5.31
3 5.18
2 5
1 4.83
2
0.9 4.8
0.8 4.76
0.7 4.73
0.6 4.71
0.5 4.68
0.4 4.66
0.3 4.64
0.2 4.57
0.1 3.84
VBB (V) VCC (V) IC (mA)
9 10.17
8 10.08
7 9.93
6 9.75
5 9.57
4 9.33
3 9.10
3
2 8.78
1 8.48
0.9 8.42
0.8 8.36
0.7 8.3
0.6 8.27
0.5 8.22
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0.4 8.18
0.3 8.14
0.2 8.02
0.1 6.74
VBB (V) VCC (V) IC (mA)
9 13.47
8 13.35
7 13.15
6 12.91
5 12.67
4 12.35
3 12.04
2 11.62
1 11.22
4
0.9 11.14
0.8 11.06
0.7 10.98
0.6 10.94
0.5 10.88
0.4 10.83
0.3 10.77
0.2 10.61
0.1 8.92
VBB (V) VCC (V) IC (mA)
9 16.8
8 16.65
7 16.4
6 16.1
5 15.8
4 15.4
3 15.02
2 14.5
1 14
5
0.9 13.9
0.8 13.8
0.7 13.7
0.6 13.65
0.5 13.57
0.4 13.51
0.3 13.44
0.2 13.24
0.1 11.13
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The value of IC (mA) at VBB = 5V and VCC = 9V
The value of IC (mA) at VBB = 5V and VCC = 8V
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IT2140E – Electronics for Information Technology lab DCE-SOICT-HUST
The value of IC (mA) at VBB = 5V and VCC = 7V
The value of IC (mA) at VBB = 5V and VCC = 6V
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IT2140E – Electronics for Information Technology lab DCE-SOICT-HUST
The value of IC (mA) at VBB = 5V and VCC = 5V
The value of IC (mA) at VBB = 5V and VCC = 4V
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IT2140E – Electronics for Information Technology lab DCE-SOICT-HUST
The value of IC (mA) at VBB = 5V and VCC = 3V
The value of IC (mA) at VBB = 5V and VCC = 2V
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The value of IC (mA) at VBB = 5V and VCC = 1V
The value of IC (mA) at VBB = 5V and VCC = 0.9V
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IT2140E – Electronics for Information Technology lab DCE-SOICT-HUST
The value of IC (mA) at VBB = 5V and VCC = 0.7V
The value of IC (mA) at VBB = 5V and VCC = 0.6V
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IT2140E – Electronics for Information Technology lab DCE-SOICT-HUST
The value of IC (mA) at VBB = 5V and VCC = 0.5V
The value of IC (mA) at VBB = 5V and VCC = 0.4V
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The value of IC (mA) at VBB = 5V and VCC = 0.3V
The value of IC (mA) at VBB = 5V and VCC = 0.2V
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IT2140E – Electronics for Information Technology lab DCE-SOICT-HUST
The value of IC (mA) at VBB = 5V and VCC = 0.1V
Based on the measured data, plot the current-voltage characteristic of the transistor
for each value of IB (see Figure 1(b)). Write your comments on the current-voltage
characteristic. Comment on the increase of IC with respect to the increase of VCC
(note: VCC = VCE).
Plot:
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Comments:
The plotted current-voltage characteristics of the BJT (2N2222) in a common-emitter
configuration display three distinct operational regions:
1. Cutoff Region (low VCE , IC ≈ 0)
- When VCE is close to 0V, the transistor is in the cutoff region, meaning that base
current (IB) is too low to turn the transistor on.
- In this region, collector current (IC) is nearly zero, and the transistor behaves like an
open switch.
2. Saturation Region (0V < VCE < ~1V)
- As VCE increases slightly above 0V, IC rapidly increases.
- The transistor enters saturation mode, where both the base-emitter and collector-
emitter junctions are forward-biased.
- The transistor behaves like a closed switch with a low voltage drop across it.
- In this region, increasing VCE does affect IC but only slightly. The transistor is not
fully amplifying current yet.
3. Active Region (VCE > 1V)
- When VCE is further increased beyond the saturation region (~1V), IC enters a nearly
constant phase.
- In this region, the transistor is fully turned on and functions as an amplifier.
- The collector current IC depends mainly on IB and is almost independent of VCE.
- Each curve in the graph corresponds to a different VBB value, meaning that for higher
base voltages, the transistor allows more collector current to flow.
- The small slope of the curves in this region represents the Early Effect, where a slight
increase in VCE causes a small increase in IC due to widening of the transistor’s
depletion region.
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IT2140E – Electronics for Information Technology lab DCE-SOICT-HUST
Exercise 2. Figure 2 shows a switch circuit. When there is no current flowing through the
Base (i.e., VIN = 0 and the transistor is in the cut-off mode), the Collector and Emitter are
electrically isolated (i.e., like switching OFF), resulting in the LED OFF (because the circuit
is open). When there is a small current flowing through the Base by increasing VIN (VIN >
VBE (on), the Collector and Emitter are electrically connected (i.e., like switching ON),
resulting in the LED ON (because the circuit is closed).
VCC = 5V
IC
RC = 330 Ω ED
VIN L
RB = 94 kΩ C
IB B E
Figure 2. Switch circuit using a BJT.
Requirements:
Implement the switch circuit in Figure 2 with RB = 94 kΩ and RC = 330 Ω. Use a DC
power supply to provide the input voltage VIN in the range of 0-10V (i.e., VIN = 0–
10V) and VCC = 5V.
Observe the status of the LED when VIN = 0V and when VIN > 0V. Comment on the
observation.
The LED at VIN = 0V The LED at VIN > 0V (VIN = 0.7V)
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Comments:
- When VIN = 0V:
o The transistor is in cutoff mode (VBE < 0.7V).
o No current flows through the collector-emitter path (IC ≈ 0).
o The LED remains OFF.
- When VIN > 0V:
o If V > 0.7V, the transistor starts conducting.
o IC increases as V increases, causing the LED to gradually turn ON.
o When V is sufficiently high, the transistor saturates, and the LED is fully ON.
Gradually increase VIN from 0V to 10V and observe the brightness of the LED.
Comment on the results.
Observed data:
VCC (V) VIN (V) LED observation
0 OFF
1 Very dim
2 Dim
3 Brighter
4 Bright
5
5 Very bright
6 Fully ON
7 Fully ON
8 Fully ON
9 Fully ON
Comments:
1. Cutoff mode (VIN = 0V)
- VBE is too low (< 0.7V) ⇒ No base current ⇒ IC = 0
- No current flows ⇒ LED is OFF
2. Active mode (1V ≤ VIN ≤ 4V)
- As VIN increases, VBE > 0.7V, and the transistor starts conducting.
- IC gradually increases, so the LED brightness increases as well.
3. Saturation mode (VIN ≥ 5V)
- The transistor is fully ON, meaning IC is at its maximum.
- The LED is at full brightness, and increasing VIN further does not make it brighter.
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The status of the LED at VIN = 0V
The status of the LED at VIN = 1V
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The status of the LED at VIN = 2V
The status of the LED at VIN = 3V
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The status of the LED at VIN = 5V
The status of the LED at VIN = 7V
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The status of the LED at VIN = 8V
The status of the LED at VIN = 9V
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Use a multimeter to measure IC (the current flows through RC and the LED) with VIN
= 1V, VIN = 3V, VIN = 5V, VIN = 7V, and VIN = 9V, respectively. Record and explain
the measured data.
Measured data:
VCC (V) VIN (V) IC (mA)
1 1.2
3 7.12
5 5 8.72
6 8.8
9 8.83
Explanation:
1. VIN = 1V ⇒ IC = 1.2mA (Active region)
- At VIN = 1V, VBE is just crossing the threshold (~0.7V), so the transistor is partially
conducting in the active region.
- IC is small (1.2 mA), meaning only a small current flows through the LED.
- LED is dim because the current is not yet high enough.
2. VIN = 3V ⇒ IC = 7.12mA (Active region)
- At VIN = 3V, VBE is well above 0.7V, so the transistor conducts more, allowing more
current to flow.
- The IC increases significantly to 7.12 mA, indicating a stronger conduction.
- The LED is bright, but the transistor is still in the active mode, meaning a further
increase in VIN will still increase IC.
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3. VIN = 5V ⇒ IC = 8.72mA (Saturation region)
- At VIN = 5V, the transistor reaches saturation mode, where V CE is at its minimum
(~0.2V).
- IC reaches 8.72 mA, close to its maximum limit.
- Increasing VIN further will not significantly increase IC anymore because the
transistor is fully ON.
- The LED is at full brightness.
4. VIN = 7V ⇒ IC = 8.8mA (Saturation region)
- The transistor remains in saturation mode.
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- IC slightly increases to 8.8 mA, but the difference is very small compared to V IN =
5V.
- The LED stays fully ON, meaning increasing VIN has little to no effect.
5. VIN = 9V ⇒ IC = 8.83mA (Saturation region)
- The transistor is still in saturation mode, and I C barely increases (8.83 mA versus 8.8
mA at VIN = 7V).
- The LED remains fully ON, confirming that higher VIN does not increase LED
brightness after saturation.
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