Short Answer Type Questions With Answers

[P.T.U. May 20081

91. Explain why an ordinary transistor is called bipolar ? carriers
(majority and minority
charge
Ans. Because the transistor operation is carried out by two types of
carriers), an ordinary transistor is called bipola.
0.2. Why transistor is called current controlled device ? t r a n s i s t o r so
it is called the current
currentin a
Ans. The output voltage, current or power is controlled by the input
controlled device.
0.3. What is the significance of symbol ? of current flow
arrowhead in the transistor conventional
direction
the N-P-N
Ans. Arrowhead is always marked on the emitter. The direction indicates in case of transistor),.
base-to-emitter

(from emitter-to-base in case of P-N-P transistor and from leakage current is always opposite to the
reverse
Generally, no arrowhead is marked for collector since its
dírection of emitter current. ? |P.T.U. May 20081
to bias a transistor
necessary
Q 4. What do you understand by transistor biasing ? Why is it reverse
base-emitter iunction should be forward biased and the collector-base junction
AIs. For normal operation,
collector current and the
maintenance of proper collector-emiter
biased. The proper flow of zero signal transistor biasing. The amount of bias required is
signal is called the
Voltage during the passage of desired
for establishment of the operating or 0-DOint which is dictated by the mode of operation
SIgnificant
transistor is not biased properly. it would (i) work inefficiently, () produce distortion in the
In case the or temperature risSe, the operating point may
output signal and (iii) with the change in transistor parameters
shift and the amplifier output will be unstable.
Which of the transistor currents is alwavs the largest ? Which[U.P. is always the smallest ?Which two currents
Technical Univ. First Semester 2006-071
are relatively close in magnitude ?
smallest. The collector
Ans. The emitter current I is always the largest one. The base current I is always the
current I and emitter current I; are relatively close in magnitude i.e., I I:
Q. 6. Why silicon type transistors are more often used than germanium type ?
Ans. Because silicon transistor has smaler cutoff current lcRo small variations in lçBo due to variations in
temperature and high operating temperature as compared to those in case of germanium type.
0.7. Why is size of collector kept maximum in BJT ? [Rajasthan Univ. 2004)
Ans. The potential hill(bend in the Fermi level) between the base and collector region is very steep. Specifically
the electrons must lose a considerable energy as they move from the base region to the collector region.
Typically the electrons give up their energy in the form of heat, therefore, the collector region must be
capable of dissipating this heat energy. It is for this reason that the size of the collector is kept maximum in
BJT.

0. 8. Why the width of the base region of atransistor is kept very smallcompared to other regions ?
Ans. Base region of a transistor is kept very small and very lightly doped so as to pass most of the injected cnag
carriers to the collector.
 BroLAR JuNCTION TRANSISTOR (BJT) 199
Why emitter is always
forward bizsed ?
is always forward
Emitter
SABS. biased It base s0 as to Supply majority charge carriers to the base.
Why collecto is
10. always reverse
Ans. Collector is always reverse biased biased w.r.Lso
w.rt. base . base
25 to?remove the charge carriers away from the base-collector
junction.
What are threE regions
of operatíon of a [P.T.U. December 2007|
Ans. The three regions of operation transistor?
of a transistor are:
a Cutoff region, (ii) Active region and
Can atransistor be (iti) Saturation region.
. 12. obtained by connectíng two semiconductor diodes back to back ?
Ans. No Reczuse in case of
two
and there is nothing that discete back to back connected diodes there are four doped regions instead of three
resembles a thin base region
How a and Bare related to
each other ?
between an emitter and a collector.
Ans, C and Bare related as below :
1
B
1+B or B=a
1-4
Q14. Define beta of a transistor.
8
Ans. The factor of a transistor is the
of collector current to base common-emitter current
current. gain of that transistor and is defined as the ratio

ie, B = e
0. 15. Why there ís a maximum limit of collector Supply voltage for a
transistor ?
hs, Although collector current is practícally independent of collector
range, but if Vc is increasei beyond a certain value collector supply voltage over the transistor operatin8
current I, eventually increases raplaiy d
possibly destroys the device.
0.16. Explain why ce >> Iceo? [U.P.T.U. Second Semester 2003-04]
Ans. The collector cutoff current denoted by IEO 0S Much larger than Ireo LcEo 0S given as

Because a. is nearly equal to unity (slightly less than unity), IcEo >> lCBO
o. 17. Givereasons why common emitter (CE) configuration is widely used in amplifier circuits.
[Pb. Technical Univ. May 2008]
Ans. CE configuration ís mainly used because its current, voltage and power gains are quite high and the ratio
of output impedance and input impedance are quite moderate.
0. 18. Why is CE configuration preferred for cascaded amplifiers ? [Pb. Technical Uniy. May 2007]

Ans. CE configuration, because of its moderate output to input impedance ratio, is preferred for cascaded amplifiers.
name ?
0. 19, Why CC configuration is called a voltage buffer ? What is its other 2006-07]
[U.P. Technical Univ. Third Semester
output impedance, the common collector circuit finds
wide
Ans. Because of its high ínput impedance and low why it
impedance source and low impedance load, that is
application as a buffer armplifier between a high
emitter follower.
is calledavoltage buffer. Its other name is
which a CCamplifier may be used.
20. What are the main purposes for collector circuit finds wide
input ímpedance and low output impedance, the common
Ans. Because of its hígh
between a high impedance source
and low impedance load.
application as a buffer amplifier Univ. May 2008|
CC and CE in terms of their resistances. [Pb. Technical
configuratíons CB.
V21.Compare three
 200 A TEXTB0OK OF ELECTRONC DEVICE

Ans. Configuration/ Common Common Common

Collector
Resistances Base Emitter

Input Resistance Low (about 100 2) Medium (about 800 2) Very high (about 750 kQ)
Low (about 50 Q)
Output Resistance Very high High
(about 500 k£) (about 50 kQ)

does it have a greater

22. What do you understand by collector reverse saturation current ? In which configuration
value ? [G.G.S.I.P. Univ. December 20091
Ans, When input current (I, in case of CB configuration and I, in case of CE configuration) is zero, collector
current I, is not zero although it is very small. In fact this is the reverse leakage current or collector reverse
saturation current (Bo Or simply Iro in CB confguration and Ireo in CE configuration). In case of CE
configuration it is much more than that in case of CB configuration.
Q. 23. What do you mean by operating point ?
Ans. Quiescent point is a point on the dc load line which represents Vcg and I in the absence of ac signal and
variations in Vce and I, take place around this point when ac signal is applied.

Problems

1. Determine emitter current Ig, collector current I, for a transistor with a =0.97 and collector to base leakage
current 10 uA. Base current is 50 uA. TAns. 2.00 mA, 1.95 mA)
2. For a certain transistor collector current is 6.25 mA, base current is 100 uA and collector-to-base leakage
current 5 uA. Determine emitter current and ao |Ans. 6.35 mA, 0.983]
3. In a particular transistor the collector current is 5.6 mA and the emitter current is 5.75 mA. Determine a,.
[Ans. 0.974]
4. A transistor has = 0.98. If emitter current of the transistor is I mA, determine the base current and gain
factor B. JAns. 20 uA; 49)
5. Determine ß if oa = 0.99 [Ans. 99]
6. A bipolar junction transistor has a collector current of 4mA and base current of 20 uA. Determine itsR
[Ans. 200]
7. A BJT has a base current of 200 uA and emitter current of 20 mA. Determine collector current and &.
[Ans. 19.8 mA; 991
8. In a transistor I = 0.95 mA, I, = I mA. Determine base current, a and ß in CB configuration.
[Ans. 50 uA; 0.95: 19)
9. In a transistor CE configuration the voltage across 5k2 load resistance is 5V. Determine collector current.
base current and emitter current if B = 50. |Ans. 1.0 mA: 20 uA; 1.02 mA]
10. In agrounded base configuration the voltage rop across load resistance of 4k2 is 3.2 V. Determine collector
current, emitter current and base current if a = 0.96. [Ans. 0.8 mA; 0.8333 mA: 0.0333 mA)
11. ACE transistor amplifier has input resistance of 100 2 and output resistance of 6kQ2. Determine the voltage
gain and power gain if current gain factor is 90. [Ans. 5,400: 486,000}
12. Increase in collector-emiter voltage from 4 Vto 8 Vcauses increase in collector current from 5 mA to 6 mA.
Determine the output resistance. [Ans. 4 kQ)
13. A change of 200 mV in base-ernitter voltage causes achange of 60 uA in the base current. Determine its
input resistance. [Ans. 3.33 k2]
14. A transistor is connected in CB configuration. When the emitter voltage is changed by 200 mV, the emitter
current changes by 5 mA. During this variation, the collector to base voltage is kept fixed. Calculate the
dynamic input resistance of transistor. (Ans. 40 2)