WELCOME TO
VLSI Circuit Design
Short Profile
TAFSIR AHMED KHAN
LECTURER, EETE, DIU
E-MAIL: [email protected]
RESEARCH INTEREST: OPTO & MICRO-electronic Devices, Digital
Circuit and IC Design, Modeling; Biomedical engineering; Ultra Low
Power Circuits; Sensors, Image processing.
Course Contents, Evaluation
Procedure and Text Books
EVALUATION
MID Term exam
20%
Class test/quiz 20%
Attendance and assignments
10%
FINAL Term exam
50%
Total 100%
Quizes:
3 x Quizes (Mid 2- Final 1)20*3=60 marks
(Average of all quizzes will be considered)
TEXT BOOKS:
CMOS VLSI Design- A Circuits and Systems Perspective, Neil H.E. Weste &
David Harris, 3rd Edition.
Principles of CMOS VLSI Design- A Systems Perspective, Neil H.E. Weste &
Kamran Eshraghian, 2nd Edtion, Addison-Wesley Limited.
IC Products
Processors
Memory chips
PLA, FPGA
Embedded systems
Mobile communication,
audio/video processing
Programmable
RAM, ROM, EEPROM
Analog
CPU, DSP, Controllers
Used in cars, factories
Network cards
System-on-chip (SoC)
Images: amazon.com
VLSI:Very Large Scale Integration
Integration:
Integrated Circuits
multiple devices on one substrate
How
large is Very Large?
SSI
(small scale integration) Transistors<10 (!)
MSI (Medium scale integration) 10<Transistors<1000(!)
LSI (Large scale integration) 1000<Transistors<100000(!)
VLSI (Very large scale integration)
100000<Transistors<10000000
ULSI/SLSI (Super Large Scale Integration)
10000000<Transistors
The First Computer
The Babbage
Difference Engine
(1832)
25,000 parts
cost: 17,470
ENIAC - The first electronic computer (1946)
ASIC ( application-specific integrated circuit) with mixture
of full custom,RAM and standard cells
Single port RAM
Dual port RAM
Full custom
Standard cell
FIFO
Pentium
VLSI Trends: Moores Law
In
1965, Gordon Moore predicted that
transistors would continue to shrink, allowing:
Doubled transistor density every 18-24 months
Doubled performance every 18-24 months
History
has proven Moore right
But, is the end is in sight?
Physical limitations
Economic limitations
Gordon Moore
Intel Co-Founder and Chairmain Emeritus
10
Image source: Intel Corporation www.intel.com
Moores Law (cont)
Intel
co-founder Gorden Moore notice in 1964
Number of transistors doubled every 12 months
while price unchanged
Slowed down in the 1980s to every 18 months
Amazingly still correct, likely to keep until 2010.
Moores Law, Intels Version
Transistors
Pentium III
10M
80486
1M
80386
100K
10K
1K
Pentium
8086
4040
80286
8080
1975
1980
1985
1990
1995
2000
IC Scales
Integration level
Small Scale Integration
Medium Scale Integration
Large Scale Integration
Very Large Scale Integration
Ultra Large Scale Integration
Super Large Scale Integration
Abbreviation
Number of devices on a chip
SSI
2 to 50
MSI
LSI
VLSI
ULSI
SLSI
50 to 5,000
5,000 to 100,000
100,000 to 10,000,000
10,000,000 to 1,000,000,000
over 1,000,000,000
International Technology Roadmap
for Semiconductors (ITRS)
Progress of miniaturization and comparison of sizes of
semiconductor manufacturing process nodes with some
microscopic objects and visible light wavelengths
International Technology Roadmap
for Semiconductors (ITRS)
Minimum feature size (m)
DRAM
Bits/chip
Cost/bits @ volume
(millicents)
Microprocessor
Transistors/cm2
Cost/Transistor @ volume
(millicents)
ASIC
Transistors/cm2
Cost/Transistor @ volume
(millicents)
Wafer size (mm)
1995
0.35
1997
0.25
1999
0.18
2001
0.13
2004
0.10
2007
0.07
64 M
256 M
1G
4G
16 G
64 G
0.017
0.007
0.003
0.001
0.0005
0.0002
4M
7M
13 M
25 M
50 M
90 M
0.5
0.2
0.1
0.05
0.02
2M
4M
7M
13 M
25 M
40 M
0.3
200
0.1
200
0.05
200 300
0.03
300
0.02
300
0.01
300
400 (?)
Julius Edgar Lilienfeld
(April 18, 1882 August 28, 1963)
Julius Edgar Lilienfeld was an
Austro-Hungarian physicist. He was
born in Lemberg in Austria-Hungary
(now called Lviv in Ukraine), moved
to the United States in the early
1920s, originally in order to defend
patents he possessed, and then
made a scientific/industrial career
there. He invented an "FET-like"
transistor and the electrolytic
capacitor in the 1920s.
He filed several patents describing the construction and
operation of transistors as well as many features of
modern transistors.
(US patent #1,745,175 for an FET-like transistor was
granted January 28, 1930.) When Brattain, Bardeen,
and Robert Gibney tried to get patents on their earliest
devices, most of their claims were rejected due to the
Lilienfeld patents. The optical radiation emitted when
electrons are hitting a metal surface is named "Lilienfeld
radiation" after he first discovered it close to X-ray tube
anodes. Its origin is attributed to the excitation of
plasmons in the metal surface.
The American Physical Society has named one of its
major prizes after Lilienfeld.
Brief History
FET-like" transistor by Julius Edgar Lilienfeld, 1920
First Transistor, AT&T Bell Lab, 1947 (William
Shockley, John Bardeen and Walter Brattain) (Ge)
First Single Crystal Germanium, 1950
First Single Crystal Silicon, 1952
First IC device, TI, 1958 (Jack Kilby)
First IC product, Fairchild Camera, 1961(Robert
Noyce)
First Transistor, Bell Lab, 1947
Photo courtesy:
AT&T Archive
First Transistor and Its Inventors
John Bardeen, William Shockley and Walter Brattain
Photo courtesy: Lucent Technologies Inc.
First IC Device Made by Jack Kilby of Texas
Instrument in 1958
Photo courtesy: Texas Instruments
First Silicon IC Chip Made by Robert
Noyce of Fairchild Camera in 1961
Photo courtesy: Fairchild Semiconductor International
MOSFET
~10nm
2000
Texas
Instruments
2015
Vin
IC Design:
CMOS Inverter
(a)
Vdd
NMOS
Vss
PMOS
Vout
Shallow trench isolation (STI)
N-channel active region
N-channel Vt
N-channel LDD
N-channel S/D
P-channel active region
P-channel Vt
P-channel LDD
P-channel S/D
(b)
P-well
Polycide gate and local
interconnection
Metal 1
Contact
N-well
Metal 1, AlCu
W
n+
PMD
n+
STI
P-Well
p+
N-Well
P-Epi
P-Wafer
p+
(c)
