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IGBT: Insulated-Gate Bipolar Transistor: - Combination BJT and MOSFET - High Voltage and Current Ratings - Symbol

The IGBT is a transistor that combines the high input impedance of a MOSFET and the low conduction losses of a BJT. It has high voltage and current ratings. When the gate-emitter voltage is below the threshold voltage, both transistors in the IGBT equivalent circuit are off. When the gate-emitter voltage exceeds the threshold, the PNP transistor turns on and the NMOS transistor conducts, drawing current through the device. IGBTs are commonly used in high power applications like inverters due to their ability to handle high voltages and currents at high frequencies.

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285 views15 pages

IGBT: Insulated-Gate Bipolar Transistor: - Combination BJT and MOSFET - High Voltage and Current Ratings - Symbol

The IGBT is a transistor that combines the high input impedance of a MOSFET and the low conduction losses of a BJT. It has high voltage and current ratings. When the gate-emitter voltage is below the threshold voltage, both transistors in the IGBT equivalent circuit are off. When the gate-emitter voltage exceeds the threshold, the PNP transistor turns on and the NMOS transistor conducts, drawing current through the device. IGBTs are commonly used in high power applications like inverters due to their ability to handle high voltages and currents at high frequencies.

Uploaded by

Aastha Mandalia
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd

IGBT: Insulated-Gate Bipolar Transistor

• Combination BJT and MOSFET


– High Input Impedance (MOSFET)
– Low On-state Conduction Losses (BJT)
• High Voltage and Current Ratings
• Symbol

1
Cross-Sectional View of an IGBT

Metal

Silicon Dioxide

Metal

Emitter
2
IGBT Equivalent Circuit for VGE<VT
+
IEPNP VCC
IBPNP

ICNPN
ICPNP
Leakage Current
IBNPN

Both transistors are OFF

IENPN IRBE

3
IGBT Equivalent Circuit for VGE>VT
+
PNP transistor turns ON, VCC
RMOD decreases due to
carrier injection from the
PNP Emitter.

NPN Transistor
becomes forward
biased at the BE,
MOS transistor conducts, drawing current
drawing current from the from the Base of
Base of the PNP transistor. the PNP transistor.

4
Channel is Induced When VGE>VT

RMOD PNP

electrons

NPN
RBE
Induced Channel

5
STEADY STATE
CHARACTERISTICS OF AN IGBT

6
IGBT Output Characteristics

Follows an SCR
characteristic

7
IGBT Transfer Characteristic

8
Example of IGBT Ratings
• Used in high voltage / current & high frequency
switching power applications (Inverters, SMPS).
• Example: IGBT 2500V / 2400A.
• Max. Frequency: 20KHz.
• Switching time: 5 to sec.
• On state resistance: 2.3m.

9
Fairchild FGA25N120AND IGBT

10
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