polyfet rf devices
ST724
General Description
Silicon VDMOS and LDMOS
transistors designed specifically SILICON GATE ENHANCEMENT MODE
for broadband RF applications.
Suitable for Militry Radios,
RF POWER VDMOS TRANSISTOR
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI, 60.0 Watts Single Ended
Laser Driver and others.
TM Package Style AT
"Polyfet" process features
low feedback and output capacitances
resulting in high F t transistors with high
HIGH EFFICIENCY, LINEAR
input impedance and high efficiency. HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total Junction to Maximum Storage DC Drain Drain to Drain to Gate to
Device Case Thermal Junction Temperature Current Gate Source Source
Dissipation Resistance Temperature Voltage Voltage Voltage
o o o o
190 Watts 0.85 C/W 200 C -65 C to 150 C 19.0 A 36 V 36 V 20 V
RF CHARACTERISTICS ( 60.0 WATTS OUTPUT )
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain 10 dB Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz
η Drain Efficiency 75 % Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz
VSWR Load Mismatch Tolerance 20:1 Relative Idq = 0.80 A, Vds = 12.5 V, F = 175 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltage 36 V Ids = 80.00 mA, Vgs = 0V
Idss Zero Bias Drain Current 4.0 mA Vds = 12.5 V, Vgs = 0V
Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V
Vgs Gate Bias for Drain Current 1 7 V Ids = 0.40 A, Vgs = Vds
gM Forward Transconductance 5.2 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance 0.20 Ohm Vgs = 20V, Ids =10.00 A
Idsat Saturation Current 38.00 Amp Vgs = 20V, Vds = 10V
Ciss Common Source Input Capacitance 180.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Crss Common Source Feedback Capacitance 14.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
Coss Common Source Output Capacitance 220.0 pF Vds = 12.5 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES REVISION 03/13/2002
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
ST724
POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE
ST724 POUT VS PIN Freq=175MHz, S1C 4 DIE CAPACITANCE
1000
VDS=12.5V, Idq=.8A
80 14.00
70
13.00 Coss
60
Pout 12.00
50 Ciss
100
40 11.00
30 Crss
10.00
Efficiency = 75%
20
Gain
9.00
10
0 8.00 10
0 2 4 6 8 10 0 2.5 5 7.5 10 12.5 15
PIN IN WATTS V D S I N V O L T S
IV CURVE ID & GM VS VGS
S1C 4 DIE IV S1C 4 DIE ID & GM Vs VG
50 100.00
45 Id in amps; Gm in mhos
40
Id
35 10.00
ID IN AMPS
30
25
20 gM
1.00
15
10
5
0.10
0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16
vg=2v Vg=4v VDS IN VOLTS
Vg=6v vg=8v 0 Vgs in Volts
Zin Zout PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01 .XXX +/-.005 inches
03/13/2002
POLYFET RF DEVICES REVISION
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:
[email protected] URL:www.polyfet.com
